Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication

Peláez, R. J.; Castán, Helena; Dueñas, S.; Barbolla, J.; Redondo, E.; Mártil, I.; González-Dı́az, G.

doi:10.1063/1.371774

Cited by 7 publications

(1 citation statement)

References 40 publications

(50 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon nitride (SiN x :H) is an extensively used dielectric in both silicon and III-V semiconductor device technologies. The most usual applications include passivation layers [1,2], optoelectronic devices [3,4], thin film transistors (TFTs) [5,6] and metal-insulator-semiconductor (MIS) devices [7,8]. Plasma deposited silicon nitride has also emerged as a passivating material for crystalline silicon solar cells, which simultaneously provides good antireflection properties [9,10].…”

Section: Introductionmentioning

confidence: 99%

Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

Wang

Reehal

Martínez

et al. 2003

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Short title: "Characterization of silicon nitride films grown by electron cyclotron resonance".Classification numbers (PACS): 61.43. Er, 68.55.Ln, 77.84.Bw, 78.30.Ly, 81.15.Gh, 82.80.Yc ABSTRACTAmorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N 2 and SiH 4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection analysis (ERDA), Fourier transform infrared spectroscopy, and ellipsometry. All samples show N/Si ratios near or above the stoichiometric value (N/Si=1.33). The hydrogen content determined from ERDA measurements is significantly higher than the amount detected by infrared spectroscopy, evidencing the presence of non bonded H.As the N 2 /SiH 4 gas flow ratio is increased (by decreasing the SiH 4 partial pressure), the Si content decreases and the N-H concentration increases, while the N content remains constant, resulting in an increase of the N/Si ratio. The decrease of the Si content causes a decrease of the refractive index and the density of the film, while the growth ratio also decreases due to the limiting factor of the SiH 4 partial pressure. The infrared Si-N stretching band shifts to higher wavenumbers as the N-H concentration increases.The increase of deposition temperature promotes the release of H, resulting in a higher incorporation of N and Si into the film and a decrease of the N/Si ratio. The effect of increasing the microwave power is analogous to increasing the N 2 /SiH 4 ratio, due to the increase in the proportion of nitrogen activated species. 1 I INTRODUCTIONSilicon nitride (SiN x :H) is an extensively used dielectric in both silicon and III-V semiconductor device technologies. The most usual applications include passivation layers [1,2], optoelectronic devices [3,4], thin film transistors (TFTs) [5,6], and metal-insulatorsemiconductor (MIS) devices [7,8]. Plasma deposited silicon nitride has also emerged as a passivating material for crystalline silicon solar cells, which simultaneously provides good antireflection properties [9,10].Electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) is a well established technique for the deposition of SiN x :H films. As other plasma techniques, it allows low deposition temperatures, satisfying the requirements of ultra large scale integration technology (ULSI) [11,12]. Additionally, substrates are placed outside the plasma region, reducing the damage produced by ion bombardment [13]. Finally, the ECR technique is a very efficient method for the activation of the precursor gases [14,15], obtaining high density plasmas and making possible the use of N 2 instead of NH 3 , thereby reducing the H content of the films.There is extensive research devoted to the analysis of the properties of amorphous hydrogenated silicon nitride films deposited by ECR [...

show abstract