Electrical characterization of Cu-diffusion barriers using Schottky diodes

Ahrens, Christian H.; Friese, G.; Ferretti, R.; Schwierzi, B.; Haße, W

doi:10.1016/s0167-9317(96)00058-5

Cited by 10 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of Cu at the contact interface was reported to have a strong influence on the capacitance of a reverse-biased Schottky diode and its I-V characteristics upon thermal treatment. 191,192 Interestingly, this technique proved to be more sensitive than measurements of p-n junction leakage currents. 192 The electrical measurement techniques listed above are much more sensitive than traditional depth-profiling techniques.…”

Section: Measurements Of Current-voltage ͑I-v͒ Characteristics Ofmentioning

confidence: 99%

“…191,192 Interestingly, this technique proved to be more sensitive than measurements of p-n junction leakage currents. 192 The electrical measurement techniques listed above are much more sensitive than traditional depth-profiling techniques. They can detect Cu penetration through the barrier after anneals at temperatures 50-200 K lower than the depth profiling technique.…”

Section: Measurements Of Current-voltage ͑I-v͒ Characteristics Ofmentioning

confidence: 99%

See 1 more Smart Citation

Physics of Copper in Silicon

Istratov

Weber

2002

J. Electrochem. Soc.

364

221

View full text Add to dashboard Cite

This article reviews the progress made in the studies of copper in silicon over the last several years and puts forward a comprehensive model of the behavior of copper in silicon. Technical aspects of this model are discussed in detail. It is shown that many important aspects of the behavior of copper in silicon are not shared with the other 3d transition metals. The positive charge state of interstitial copper makes its defect reactions Fermi-level-dependent, and results in a noticeable difference in the out-diffusion and precipitation behavior of copper in n-Si and p-Si. The extremely high diffusivity of copper in silicon, which is a consequence of the small ionic radius of copper and its relatively weak interaction with the silicon lattice, makes it highly mobile at room temperature and impacts the stability of copper complexes. Large lattice strains and electrostatic effects in p-Si make the formation of copper-silicide precipitates in the bulk energetically unfavorable, unless the chemical driving force for precipitation is high enough to overcome the nucleation and precipitation barrier. Literature data on the effect of copper on minority carrier lifetime and device yield are analyzed using our improved understanding of the physics of copper in silicon. Finally, the impact of the physics of copper in silicon on the development and characterization of copper diffusion barriers is discussed. © 2001 The Electrochemical Society. All rights reserved.

show abstract

Section: Measurements Of Current-voltage ͑I-v͒ Characteristics Ofmentioning

confidence: 99%

Section: Measurements Of Current-voltage ͑I-v͒ Characteristics Ofmentioning

confidence: 99%

Physics of Copper in Silicon

Istratov

Weber

2002

J. Electrochem. Soc.

364

221

View full text Add to dashboard Cite

show abstract

“…TiN is one of the commonly used materials because of its low resistivity and diffusion barrier properties. [10][11][12][13][14][15] In the CVD process for TiN growth, an incubation time, during which no film growth seems to occur, is generally observed. 16) Although it is assumed that nucleation and grain growth occur within this time, detailed mechanisms are not yet clear.…”

Section: Introductionmentioning

confidence: 99%

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition

Okuda

Naito

Nakatsuka

et al. 2006

jjap

View full text Add to dashboard Cite

show abstract

“…2 Tungsten nitride layers are promising barriers against Cu diffusion. 3,4 Chemical vapor deposition ͑CVD͒ of tungsten nitrides using WF 6 and NH 3 is known to suffer from the formation of an adduct WF 6 4NH 3 in the cold zones of a reactor. 5 The ALD separates the reactants using a sequential pulsing.…”

mentioning

confidence: 99%

Atomic Layer Deposition of W[sub 1.5]N Barrier Films for Cu Metallization

Bystrova

Aarnink

Holleman

et al. 2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

An atomic layer deposition process to grow tungsten nitride films was established at 350°C with a pulse sequence of WF 6 /NH 3 /C 2 H 4 /SiH 4 /NH 3 . The film composition was determined with Rutherford backscattering as W 1.5 N, being a mixture of WN and W 2 N phases. The growth rate was ϳ1 ϫ 10 15 W atom/cm 2 per cycle ͑monolayer of W 2 N or WN͒. The films with a thickness of 16 nm showed root-mean-square roughness as low as 0.43-0.76 nm. The resistivity of the films was stable after 50 cycles at a value of 480 ⍀ cm. Results of four-point probe sheet resistance measurements at elevated temperature demonstrated that our films are nonreactive with Cu at least up to 500°C. Results of I-V measurements of p + /n diodes before and after heat-treatment in ͑N 2 + 5% H 2 ͒ ambient at 400°C for 30 min confirmed excellent diffusion barrier properties of the films.

show abstract

Electrical characterization of Cu-diffusion barriers using Schottky diodes

Cited by 10 publications

References 15 publications

Physics of Copper in Silicon

Physics of Copper in Silicon

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition

Atomic Layer Deposition of W[sub 1.5]N Barrier Films for Cu Metallization

Contact Info

Product

Resources

About