Electrical characterization of CNT contacts with Cu Damascene top contact

Veen, Marleen H. van der; Vereecke, Bart; Huyghebaert, Cedric; Cott, Daire; Sugiura, Masahiro; Kashiwagi, Yusaku; Teugels, Lieve; Caluwaerts, Rudy; Chiodarelli, Nicolò; Vereecken, Philippe M.; Beyer, Gerald; Heyns, Marc; Gendt, Stefan De; Tőkei, Zsolt

doi:10.1016/j.mee.2012.09.004

Cited by 29 publications

(27 citation statements)

References 16 publications

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“…Electrical characterization of CNT‐based vias fabricated in a chain structure is also performed, where the vias are connected by alternating top and bottom metal lines. The resistance values measured for two sizes of vias, 10 × 10 and 5 × 5 μm 2 , are 25 and 100 Ω, respectively, representing some of the lowest resistance for CNT‐based vias when compared with recent studies …”

Section: Introductionmentioning

confidence: 78%

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

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Keywords: nanomaterials, carbon nanotubes, photothermal chemical vapor deposition, low temperature growth 2 For carbon nanotubes (CNTs) to be exploited in electronic applications the growth of high quality material on conductive substrates at low temperatures (< 450 o C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surface at low temperatures using conventional chemical vapor deposition (CVD). Here, we demonstrate production of high quality vertically-aligned CNTs at low substrate temperatures (350 -440 o C) on conductive TiN thin film using photo-thermal CVD by confining the heat required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells and metallicity. The highest structural quality with a visible Raman D-to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420 o C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25×10 -2 Ωcm represents some of the lowest values reported. Finally, the broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed.3

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Section: Introductionmentioning

confidence: 78%

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

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“…Also several studies have surveyed the electrodeposition of the combination of CNTs/metal ions or CNTs/metal oxides on the surface of various electrode substrates [24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Structural and electrochemical characterization of carbon electrode modified by multi-walled carbon nanotubes and surfactant

Pajootan

Arami

2013

Electrochimica Acta

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“…After growth, the integration included some non-standard process steps that are related to the presence of the CNTs. The oxide encapsulation (15 nm Al 2 O 3 and 50 nm SiO 2 ) is needed to fixate the CNT during the short planarization step by CMP (30 seconds), which removes ~2 µm topography resulting from the CNT growth [7]. We introduced a new step before metal 1 (M1) metallization (step 7 in Fig.…”

Section: Structural Characterization Of the Cnt Contactmentioning

confidence: 99%

“…The images show different kinds of CNT-to-metal nanostructures for the top contact as well as for the bottom contact interface. Next, we implemented possible routes to reduce the single CNT contact hole resistance of 4 kΩ for aspect ratio (AR) of 2 for these 150 nm contacts [7]. Here we discuss the quantitative comparison of splits on cleaning of the top contact, different kind of top metal, and compare effect of annealing.…”

Section: Introductionmentioning

confidence: 99%

Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization

Veen

Vereecke

Sugiura

et al. 2012

2012 IEEE International Interconnect Technology Conference

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This paper discusses the electrical and structural characterization of 150 nm diameter contacts filled with carbon nanotubes (CNTs) and a Cu damascene top metal. We present the first images of CNTs in direct contact with the top metal. A CNT tip clean before metallization reduced the single CNT contact hole resistance from 4.8 kΩ down to 2.8 kΩ (aspect ratio 2.4). The first basic electrical breakdown experiments with Kelvins resulted in high breakdown currents of 5-13 MA/cm 2 .

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Electrical characterization of CNT contacts with Cu Damascene top contact

Cited by 29 publications

References 16 publications

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Structural and electrochemical characterization of carbon electrode modified by multi-walled carbon nanotubes and surfactant

Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization

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