Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition

Maehashi, Kenzo; Ohno, Yasuhide; Inoue, Kōichi; Matsumoto, Kazuhiko; Niki, Toshikazu; Matsumura, Hideki

doi:10.1063/1.2920206

Cited by 48 publications

(36 citation statements)

References 15 publications

(15 reference statements)

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“…CNTFETs were fabricated using position-controlled growth [44,45], as shown in [46], as shown in Figure 3b. Source and drain contacts were formed on the patterned chemical catalyst after the CNT growth, and the substrate was used as a back gate, as shown in Fig.…”

Section: Fabrication Process Of Carbon Nanotube Devicesmentioning

confidence: 99%

Aptamer‐Based Label‐Free Immunosensors Using Carbon Nanotube Field‐Effect Transistors

et al. 2009

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Aptamer-based label-free immunosensors were fabricated for immunoglobulin E (IgE) detection using carbon nanotube field-effect transistors (CNTFETs). Aptamers are artificial oligonucleotides and thus are smaller than the Debye length. After aptamers were covalently immobilized on CNT channels, the electrical properties of the CNTFETs were monitored in real time. Introduction of IgE at various concentrations caused a sharp decrease in the source-drain current and gradual saturation at lower currents. From the measurement of the dependence of CNTFET electrical properties on IgE concentration, the dissociation constant between aptamer and IgE reactions was estimated to be 1.9 Â 10 À9 M using the Langmuir adsorption isotherm.

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Section: Fabrication Process Of Carbon Nanotube Devicesmentioning

confidence: 99%

Aptamer‐Based Label‐Free Immunosensors Using Carbon Nanotube Field‐Effect Transistors

et al. 2009

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“…Many applications have been proposed such as nano-size transistors, bio sensors, and interconnections in large-scale circuits. Several technologies can be utilized in these applications, such as high-sensitive gas sensors [3], label-free detection for bio molecules [4,5], and n-type field effect transistor (FET) fabrication [6,7]. The room temperature operation of single electron transistors, which can usually work only at low temperature, can be archived through the use of nanotechnology [8,9].…”

Section: Introductionmentioning

confidence: 99%

Cobalt Nano Particle Size Dependence of Noise Modulations in Relation to Nonlinearity

Kawahara

Yamaguchi

Maehashi

et al. 2010

e-J. Surf. Sci. Nanotechnol.

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Carbon nanotubes (CNTs) are low-dimensional materials, and their surface therefore affects several properties of CNTs. For example, CNT field effect transistors (CNTFETs) are well known as noisy devices caused by the adhesion of molecules on the surface. However, nonlinear systems sometimes have advantages in working with noise. Therefore, we combined the noise CNTFET and another transistor of CNT for a trial nonlinear system. The sine wave amplification in the transistor with noise was then measured. In this system, the control of noise is required for operation of the device and this might be common for nano-sized devices. We can control the noise properties of CNTFET through the control of the Co nano particles catalyst. Depending on fabrication conditions, the noise of a CNTFET has different noise intensity and gate voltage (Vg) dependence with 1/f type noise. Noise in CNTFETs grown on small Co particles can be controlled within the small |Vg|, and the control range for noise is wide. We studied the modification of nonlinearity using our trial nonlinear system. It was governed by the ratio of the signals and the noise, and shows the robustness of modification.

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“…Thus, the FET structures and nano-processes of nano carbon materials should be important for applications. The carrier control of p-type and n-type conduction is also possible using a passivation layer [4,5]. Furthermore, a single electron or hole transistor as a nano-sized device has been fabricated using nanotechnology [6], which has exhibited room-temperature operation [7].…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

Kawahara

Yamaguchi

Ohno

et al. 2014

e-J. Surf. Sci. Nanotechnol.

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Nano-carbons such as carbon nanotubes and graphenes are very promising as next-generation materials, and field effect transistors (FETs) can be used with nano-carbon channels. In these nano-carbon materials, carbon nanowalls (CNWs) are constructed with a few layers of graphene and exhibit properties similar to those of graphene. We have developed a self-aligned process for CNWs using grapho-epitaxy. We have grown CNW channels on several line and space patterns fabricated by electron beam lithography and reactive ion etching. When the line and space pattern is suitable, self-aligned CNWs can be made by plasma-enhanced CVD. We also discuss the electrical properties (IDS-VDS characteristics) of the self-aligned CNW-FETs resulting from several growth temperatures and deposition times.

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Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition

Cited by 48 publications

References 15 publications

Aptamer‐Based Label‐Free Immunosensors Using Carbon Nanotube Field‐Effect Transistors

Aptamer‐Based Label‐Free Immunosensors Using Carbon Nanotube Field‐Effect Transistors

Cobalt Nano Particle Size Dependence of Noise Modulations in Relation to Nonlinearity

Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

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