Electrical characterization of Au/n-GaN Schottky diodes

Akkal, B.; Benamara, Z.; Abid, Hamza; Talbi, A.; Gruzza, B.

doi:10.1016/j.matchemphys.2003.11.007

Cited by 42 publications

(41 citation statements)

References 14 publications

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“…Moreover, there are two regions in the figure. The first, which is at low voltage, is governed by thermionic emission and the latter is assumed to be due to some mechanisms other than thermionic emission [7] . From this figure, one can estimate many of the diode parameters; e.g.…”

Section: Resultsmentioning

confidence: 99%

“…) [7] in equation (2). It can be modified to give zero-bias barrier height directly as Where J s (= I s /A) is the current density Barrier height given by this method is very sensitive for the saturation current.…”

Section: Resultsmentioning

confidence: 99%

“…The built-in potential and the ionized donor concentration of GaN were determined to be 0.925 V and 7.75 × 10 16 cm -3 respectively [7] . By current-voltage methods; the barrier height, was determined [7] at room temperature and it was evaluated to be 0.98 eV but it was found to be 1.02 eV by the capacitance-voltage technique. The built-in potential and the ionized donor concentration of GaN were determined to be 0.925 V and 7.75 × 10 16 cm -3 respectively [7] .…”

mentioning

confidence: 99%

“…Also, the current-voltage characteristics of Au/n-GaN Schottky diodes in the temperature range 80-300 K are determined [7] . The GaN samples were 4µm thick epitaxial layer grown by metal organic chemical vapor deposition on (0001) sapphire substrate with a carrier concentration of about 10 17 cm -3…”

mentioning

confidence: 99%

“…By current-voltage methods; the barrier height, was determined [7] at room temperature and it was evaluated to be 0.98 eV but it was found to be 1.02 eV by the capacitance-voltage technique. The built-in potential and the ionized donor concentration of GaN were determined to be 0.925 V and 7.75 × 10 16 cm -3 respectively [7] . By current-voltage methods; the barrier height, was determined [7] at room temperature and it was evaluated to be 0.98 eV but it was found to be 1.02 eV by the capacitance-voltage technique.…”

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confidence: 99%

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Thermal Study of Gallium Nitride - Metal Contact

Al-Ameer¹

2009

sci

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Abstract. GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 10 19 cm -3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10 -7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero-bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it , increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 Ω at room temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Thermal Study of Gallium Nitride - Metal Contact

Al-Ameer¹

2009

sci

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A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Helal¹,

Benamara²,

Arbia

et al. 2020

Int J Numerical Modelling

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In this paper, a study of the effect of thin GaN interfacial layer (1 nm) on the electrical behavior of Au/n‐GaAs structure is investigated in wide temperature range 100 to 400 K, using Silvaco‐Atlas simulator. As a result, from I‐V characteristics, the series resistance R s is increased with decreasing temperature for Au/GaN/n‐GaAs structure, while it is remained almost constant for Au/n‐GaAs structure. The saturation current I s is decreased with decreasing temperature for both structures. The ideality factor n is increased, and the barrier height ɸbn is decreased when temperature decreases, with important variation for Au/GaN/n‐GaAs structure. This abnormal behavior is due to the deviation of the dominant conduction mechanisms, from the thermionic emission TE current to the thermionic field emission TFE and the field emission FE. As well as, the Au/n‐GaAs structure shows a homogeneous of barrier height, while it is inhomogeneous for Au/GaN/n‐GaAs structure. In addition, from C‐V characteristics, the potential diffusion V d and the barrier height ɸbn are increased with decreasing temperature for both structures, conversely to those obtained from the TE theory. These results confirm the deviation of the TE current to the TFE and FE currents with decreasing temperature for the Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes.

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Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage

Helal¹,

Benamara²,

Arbia

et al. 2021

Int J Numerical Modelling

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We report on the electrical behavior of Metal/n‐GaAs Schottky structure, using Silvaco‐Atlas software. To study the effect of metal work function ϕm on the performance of various parameters such as saturation current Is, ideality factor n, and barrier height ϕb, we examine a large number of contact materials having different ϕm at room temperature (300 K). The results show a significant dependence between ϕm and the electrical parameters. It is observed that the smaller values of the threshold voltage Vi are obtained for low ϕm. We also find that metals within ϕm ∈ [4.42–5.31] eV give lower n. A linear increase of the barrier height ϕb is mentioned for ϕm ∈ [4.33–5.37] which is in accordance with the theoretical relationship. In addition, the selection of four different metal contact (Cu, Au, Pt, and Ni) is devoted to simulate the Metal/n‐GaAs Schottky structure in a wide temperature range of (100–400 K). This allows us to extract and discuss the influence of temperature on the performance of our proposed device.

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Electrical characterization of Au/n-GaN Schottky diodes

Cited by 42 publications

References 14 publications

Thermal Study of Gallium Nitride - Metal Contact

Thermal Study of Gallium Nitride - Metal Contact

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of current‐voltage

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