Electrical characterization of 1D SnO<inf>2</inf> nanowires

Abstract

In this study, a method to identify the impedance of the sample composed of Sn02 nanowires (NWs) has been presented. The studied sensor structures were based on one dimensional (ID) Sn02 NWs grown by thermal deposition on silicon substrate. The topography of Sn02 NWs was investigated by means of scanning electron microscopy (SEM).The results of qualitative and quantitative analysis in selected micro region have been presented. Furthermore, the electrical properties of the NWs were measured. The base of the measurement comprised impedance spectroscopy, Pade data approximation restrained by passivity condition. This study demonstrates that it is possible to separate the characteristic parameters for various transport phenomena in the NW. R EFERENCES[1] A. Gurlo, "Nanosensors: towards morphological control of gas sensing activity. Sn02, In203, Zno and W03 case studies," Nanoscale, 3,2011, pp. 154-165.

Electrical and optical properties of spin-coated SnO2 nanofilms

“…1) that was used to measure the impedance of the samples as a function of frequency and the calculation algorithm were presented in our previous work [19]. The main part of the measuring system is HP 85046A S-Parameter Test Set, which operates with HP 8753 Network Analyzer manufactured by Hewlett Packard.…”

“…Sample measurements were made using a probe based on N-type angle connector and 50 Ω coaxial cable. The frequency dependence of the impedance was approximated by a rational function with the constraints on circuit described by the function [19]. Transmittance spectroscopy study in the spectral range of 200 to 1000 nm was performed with the application of UV-Vis HR4000CG (Ocean Optics) spectrophotometer.…”