Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Abstract

In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant ( 001) and ( 002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Sb structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Sb structure has been characterized by 1.5 AM solar simulator for determine of solar light sensitivity. The diode under 100 mW/cm 2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm 2 , Voc of 0.46 V and FF of 0.28.