Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)

Petrosyants, Konstantin O.; Kharitonov, I. A.; Lebedev, S. V.; Sambursky, Lev M.; Safonov, S. O.; Stakhin, Veniamin G.

doi:10.1016/j.microrel.2017.05.018

Cited by 14 publications

(4 citation statements)

References 20 publications

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“…It was determined that the conduction loss of the SiC JFET increases slightly with increasing temperature, however, its switching characteristics hardly changed. Petrosyants et al researched submicron SOI CMOS technology ranging from room temperature to 300 • C and obtained reliable I-V characteristics test and stability results [13]. Zhang et al improved on the preparation process of the 4H-SiC substrate and designed a temperature sensor based on an NPN type BJT (bipolar junction transistor) using a MEMS etching process [14].…”

Section: Introductionmentioning

confidence: 99%

High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

et al. 2019

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Ceramic materials are high-temperature resistant materials with promising prospects. In some applications, semiconductor devices need to be integrated with a ceramic substrate. Herein, we report on the stable operation of an Al 2 O 3 ceramic-based amorphous-Indium gallium zinc oxide (a-IGZO) thinfilm transistor (TFT) at room temperature up to 523 K. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the a-IGZO film. A mixed solution was printed on the surface of an insulating layer of alumina. After the combustion reaction, the metal electrode was printed on the surface of a-IGZO to obtain a TFT. The I ON /I OFF ratio was 6.04 × 10 6 at 293 K, and it was maintained at 1.44 × 10 5 at 523 K. It was demonstrated that the parameters of a-IGZO TFTs such as the subthreshold swing (SS), g m and µ sat changed at different temperatures. As such, they can be used as building blocks for integrated circuits that can operate at high temperatures. The fabrication of TFT-based inverters, NAND and NOR gate circuits facilitate the exploration of the possibility of more complex digital circuits that operate at high temperatures, based on hybrid circuit design.INDEX TERMS Al 2 O 3 ceramic, a-IGZO, TFT, high temperature.

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Section: Introductionmentioning

confidence: 99%

High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

et al. 2019

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“…Hotspot temperatures is crucial for predicting device reliability and lifespan. The mean-time-to-failure (MTTF), a key metric for device lifespan, is calculated using Black's formula [44]:…”

Section: Influence On the Device Thermal And Electrical Performancementioning

confidence: 99%

Heat Generation Mechanisms of Self-Heating Effects in SOI-MOS

Tang,

Cao

2024

IEEE J. Electron Devices Soc.

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The development of microelectronic devices to the nanoscale intensifies self-heating challenges, affecting efficiency and durability. Understanding the mechanisms of heat generation at this scale is crucial, yet research extending beyond Joule heat remains limited. This paper simulates the self-heating effect of Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistors (SOI-MOS) at the nanoscale and researches the characteristic and influence of different heat generation mechanisms, including the Joule heat, recombination heat and Peltier-Thomson heat. Our results provide a detailed two-dimensional distribution and intensity of various heat generation mechanisms within the silicon channel layer. It is found that Peltier-Thomson heat has the same magnitude as Joule heat at the nanoscale, and exhibits an alternating distribution pattern of hot and cold sources under the gate. But recombination heat is relatively negligible. The analysis of the influence of different heat mechanisms emphasizes the important role of Joule heat. While the offset effect limits the impact of Peltier-Thomson heat, its significance to device thermal performance should not be ignored. More importantly, this study investigates the impact of characteristic size on different heat generation mechanisms, revealing the size dependence of Peltier-Thomson heat.

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“…The affordability and reliability of silicon technology continue to drive research towards the exploitation of standard CMOS over a wider temperature range, even if WBG materials have intrinsic advantages at high temperature. In [19], electrical characterization of 180-nm and 500-nm SOI CMOS devices up to 300°C shows good performance and the existing SPICE model BSIMSOI has been adapted to cover the extended temperature range. The work in [20] instead is more oriented to the design techniques for high temperature circuits, based on 𝑔 𝑚 /𝐼 𝑑 methodology for Zero Temperature Coefficient (ZTC) biasing.…”

Section: Introductionmentioning

confidence: 99%

Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

Sbrana,

Catania,

Paliy

et al. 2024

IEEE Access

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In this paper, we discuss the challenges at the device and circuit level that must be addressed to design reliable silicon CMOS integrated circuits operating in high-temperature environments. We present experimental results on representative devices fabricated with a 180 nm CMOS SOI platform, which have been characterized up to 300°C, discuss issues arising at high temperature, and propose possible solutions. A BJT-based temperature sensor core is also described and evaluated across the same extended temperature range. We also propose and discuss design criteria optimized for a wide range of operating temperature. A sufficient on/off current ratio can be achieved by taking advantage of the isolation provided by low-leakage CMOS SOI process, while operation at low current density must be ensured to mitigate electromigration effects. Within these conditions, low-power precise sensing circuits can be effectively implemented with operating temperature up to 300°C, that are extremely relevant for industrial, mobility, and space applications.INDEX TERMS High temperature electronics; harsh environment electronics; CMOS SOI.

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Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)

Cited by 14 publications

References 20 publications

High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

Heat Generation Mechanisms of Self-Heating Effects in SOI-MOS

Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

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