Electrical characterization and Poole–Frenkel effect in sol–gel derived ZnO:Al thin films

Maity, R.; Kundoo, S.; Chattopadhyay, Kalyan Kumar

doi:10.1016/j.solmat.2004.07.008

Cited by 29 publications

(16 citation statements)

References 30 publications

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“…Also, activation energy values were obtained from a temperature variation of the conductivity measurements of the individual films. These values were 550 meV and 270 meV for n-and p-layers, respectively, which were presented in our earlier literature [16,19] and also furnished in Table 1. Taking into consideration all of these values, the approximate depletion barrier height of the diode comes out to be ∼1.7 eV (as shown in Fig.…”

Section: Resultssupporting

confidence: 68%

“…3. Electrical properties of the individual layers have been studied in detail and represented in our previous literature [16][17][18][19][20]. A comparative study of different electrooptical properties of the individual films is furnished in Table-1.…”

Section: Resultsmentioning

confidence: 99%

“…Finally, the films were annealed at 573 K for one hour to obtain crystalline ZnO: Al films. Details of the deposition conditions were reported elsewhere [16].…”

Section: Diode Fabricationmentioning

confidence: 99%

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Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

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Section: Resultssupporting

confidence: 68%

Section: Resultsmentioning

confidence: 99%

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Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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“…Transparent conducting, aluminum doped zinc oxide thin films (Al x Zn y O z , ZnO:Al) [37,38] contain about 2% wt aluminum and can be produced with spray pyrolysis [39,40,41,42,43,44], sol gel technology [45,46,47,48,49,50,51], electro deposition [52,53], vapor phase deposition [54,55], magnetron DC sputtering [56,57,58,59,60], magnetron RF sputtering [61,62,63,64] or a combination of both the sputter deposition methods [65,66,67,68,69,70,71,72,73,74,75,76,77,78,79,80,81,82]. Moreover, high quality deposition methods using thermal plasmas [83,84], (low pressure (LP), metal organic (MO), plasma enhanced (PE)) chemical vapor deposition (CVD) [85,86], electron beam evaporation [87], pulsed laser deposition [88,89,90,91,92,93] and atomic layer deposition [94] can be applied.…”

Section: Transparent Conducting Oxides (Tcos)mentioning

confidence: 99%

Transparent Conducting Oxides—An Up-To-Date Overview

2012

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Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.

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“…13,14 Also, unlike in Schottky emission where the transport of electrons is aided by thermal energy only, at higher electric fields the PooleFrenkel effect comes into play where the conduction of electrons is enhanced due to the electric field. Hence there is an increase in the current at higher biases.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependent electrical behaviour of Cu2SnS3 films

Dias

Krupanidhi

2014

AIP Advances

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The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus √V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission and the higher bias region is due to bulk limited Poole Frenkel emission. The ideality factor is calculated from the ln I versus V plot for different temperatures fitted with the thermionic emission model and is found to vary from 6.05 eV to 12.23 eV. This large value is attributed to the presence of defects or amorphous layer at the Ag / Cu2SnS3 interface. From the Richardson's plot the Richardson's constant and the barrier height were calculated. Owing to the inhomogeneity in the barrier heights, the Richardson's constant and the barrier height were also calculated from the modified Richardson's plot. The I-V-T curves were also fitted using the thermionic field emission model. The barrier heights were found to be higher than those calculated using thermionic emission model. From the fit of the I-V-T curves to the field emission model, field emission was seen to dominate in the low temperature range of 140 K to 177 K. The temperature dependent current graphs show two regions of different mechanisms. The log I versus 1000/T plot gives activation energies Ea1 = 0.367095 − 0.257682 eV and Ea2 = 0.038416 − 0.042452 eV. The log (I/T2) versus 1000/T graph gives trap depths Φo1 = 0.314159 − 0.204752 eV and Φo2 = 0.007425 − 0.011163 eV. With increasing voltage the activation energy Ea1 and the trap depth Φo1 decrease. From the ln (IT1/2) versus 1/T1/4 graph, the low temperature region is due to variable range hopping mechanism and the high temperature region is due to thermionic emission.

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Electrical characterization and Poole–Frenkel effect in sol–gel derived ZnO:Al thin films

Cited by 29 publications

References 30 publications

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Transparent Conducting Oxides—An Up-To-Date Overview

Temperature dependent electrical behaviour of Cu2SnS3 films

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