Electrical characterization and examination of temperature-induced degradation of metastable Ge<sub>0.81</sub>Sn<sub>0.19</sub>nanowires

Sistani, Masiar; Seifner, Michael S.; Bartmann, Maximilian G.; Smoliner, J.; Lugstein, Alois; Barth, Sven

doi:10.1039/c8nr05296d

Cited by 18 publications

(30 citation statements)

References 66 publications

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“…[21][22][23] The material in this composition range reveals high conductivity values and semiconductor behavior. 24 Low temperature growth enabling the formation of metastable phases can lead to extraordinary high doping levels in Ge NWs while retaining excellent crystal quality. For instance, chemical vapor deposition (CVD) as well as electrochemical approaches have the potential to incorporate very high concentrations of the metal used to grow the Ge nanocrystals.…”

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confidence: 99%

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

et al. 2019

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Highly oriented Ge 0.81 Sn 0.19 nanowires have been synthesized by a low temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as sole source of Sn for the formation of the metastable Ge 1-x Sn x semiconductor material. The strain relaxation for a lattice mismatch of  = 2.94 % between the Ge (111) substrate and the constant Ge 0.81 Sn 0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge 1-x Sn x structures with diameters in the micrometer-range show a fivefold longer compositional gradient very similar to epitaxial thin film growth. Effects of the Sn growth promoters' dimensions on the morphological and compositional evolution of Ge 1-x Sn x are described. The temperature and laser power dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge 0.81 Sn 0.19 (e.g. band gap of 0.3 eV at room temperature). These materials with band gaps in the mid-IR hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid-to near-IR photonics.

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Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

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“…The calculated power factor is 0.24 mW m −1 K −2 , superior to Si (0.041 mW m −1 K −2 ) and Ge (0.14 mW m −1 K −2 ) (Noroozi et al, 2014). The electronic properties of Ge 0.81 Sn 0.19 NWs were studied in the temperature range of 10-298 K, and resistivity of Ge 0.81 Sn 0.19 NW (∼1 × 10 −4 m) was 100 times lower than the pure Ge (∼9 × 10 −3 m) at room temperature (Sistani et al, 2018). The difficulty for the high Sn content in SiSn alloy fabrication (and, to a lesser extent, Ge-Sn) comes from the 19.5% lattice mismatch between Si and α-Sn, and Sn has a low solid solubility (∼5 × 10 19 cm −3 ) in Si (Min and Atwater, 1998).…”

Section: Si-ge-sn Binary and Ternary Alloysmentioning

confidence: 99%

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art

et al. 2021

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In our environment, the large availability of wasted heat has motivated the search for methods to harvest heat. As a reliable way to supply energy, SiGe has been used for thermoelectric generators (TEGs) in space missions for decades. Recently, micro-thermoelectric generators (μTEG) have been shown to be a promising way to supply energy for the Internet of Things (IoT) by using daily waste heat. Combining the predominant CMOS compatibility with high electric conductivity and low thermal conductivity performance, Si nanowire and SiGe nanowire have been a candidate for μTEG. This review gives a comprehensive introduction of the Si, SiGe nanowires, and their possibility for μTEG. The basic thermoelectric principles, materials, structures, fabrication, measurements, and applications are discussed in depth.

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“…Significantly, GeSn nanowires with high Sn incorporation, i.e., 19 atom %, have also demonstrated high electrical conductivity values and semiconductor behavior. 21 Mobility enhancement for both electrons and holes is predicted for GeSn alloy field effect transistor (FET) with a high Sn content due to deformation potential acoustic (dp-ac) phonon scattering, as well as alloy scattering. 22 However, there have been very few reports on synthesizing Ge 1– x Sn x nanowires with x > 0.1.…”

Section: Introductionmentioning

confidence: 99%

“…High pressures (∼21 MPa) result in Ge 1– x Sn x nanowire growth with 0.1 ≤ x ≤ 0.35, much higher than previously reported for Sn incorporation in Ge 1D lattices. Also, given the scarcity of reports detailing the electronic characterization of bottom-up grown Ge 1– x Sn x nanowires in (FET)-like devices, 21 we report the most important FET electronic figures-of-merit for nominally undoped Ge 1– x Sn x nanowires with 10 atom % Sn incorporation.…”

Section: Introductionmentioning

confidence: 99%

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors

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Doherty

Galluccio

et al. 2021

ACS Appl. Nano Mater.

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Ge 1– x Sn x nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Here we report the catalytic bottom-up fabrication of Ge 1– x Sn x nanowires with very high Sn incorporation ( x > 0.3). These nanowires are grown in supercritical toluene under high pressure (21 MPa). The introduction of high pressure in the vapor–liquid–solid (VLS) like growth regime resulted in a substantial increase of Sn incorporation in the nanowires, with a Sn content ranging between 10 and 35 atom %. The incorporation of Sn in the nanowires was found to be inversely related to nanowire diameter; a high Sn content of 35 atom % was achieved in very thin Ge 1– x Sn x nanowires with diameters close to 20 nm. Sn was found to be homogeneously distributed throughout the body of the nanowires, without apparent clustering or segregation. The large inclusion of Sn in the nanowires could be attributed to the nanowire growth kinetics and small nanowire diameters, resulting in increased solubility of Sn in Ge at the metastable liquid–solid interface under high pressure. Electrical investigation of the Ge 1– x Sn x ( x = 0.10) nanowires synthesized by the supercritical fluid approach revealed their potential in nanoelectronics and sensor-based applications.

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Electrical characterization and examination of temperature-induced degradation of metastable Ge_0.81Sn_0.19nanowires

Abstract: Electrical characterization of Ge0.81Sn0.19 nanowires has been performed revealing high electrical conductivity and semiconductor behaviour when cooled to 10 K. The impact on slightly elevated temperatures on the device stability of this metastable material is described.

Cited by 18 publications

References 66 publications

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors

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Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19nanowires

Abstract: Electrical characterization of Ge0.81Sn0.19 nanowires has been performed revealing high electrical conductivity and semiconductor behaviour when cooled to 10 K. The impact on slightly elevated temperatures on the device stability of this metastable material is described.

Cited by 18 publications

References 66 publications

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art

Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors

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Electrical characterization and examination of temperature-induced degradation of metastable Ge_0.81Sn_0.19nanowires

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors