Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si

Kalkur, T. S.; Lu, Yicheng

doi:10.1016/0040-6090(92)90122-r

Cited by 32 publications

(14 citation statements)

References 9 publications

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“…It should be remarked that the value of 2.1 for the refractive index is similar to those reported for bulk samples with monoclinic crystalline structure. 23 This fact indicates that a dense and an almost stoichiometric material is produced at those substrate temperatures.…”

Section: Resultsmentioning

confidence: 97%

Spray deposition and characterization of zirconium-oxide thin films

Ortíz¹,

Alonso²,

Haro‐Poniatowski

2005

Journal of Elec Materi

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Zirconium oxide films were prepared by the pyrosol process using zirconium acetylacetonate as source material onto clear fused quartz and (100) silicon at substrate temperatures ranging from 300°C to 575°C. X-ray diffraction (XRD) measurements show that samples prepared at substrate temperatures lower than 425°C are amorphous. Films deposited at higher temperatures and short deposition times show a cubic crystalline structure. However, for long deposition times, the samples show monoclinic crystalline structure. A similar phase transformation is observed on samples deposited at short time if they are annealed at high temperature. The cubic and monoclinic phases of the corresponding samples were confirmed by infrared (IR) and Raman spectroscopy, respectively. The ZrO 2 films with cubic phase show an almost stoichiometric chemical composition and refractive index values of the order of 2.1 with an energy band gap of 5.47 eV. The current-density electric-field characteristics of metal-oxide semiconductor (MOS) structures show a small ledge from 2 MV/cm to 4.5 MV/cm, indicating current injection and charge trapping. For higher electric fields, the current is associated with oxygen ion diffusion through the zirconium oxide film. The dielectric breakdown is observed at 6 MV/cm, which is a value higher than those observed in the monoclinic and tetragonal phases.

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Section: Resultsmentioning

confidence: 97%

Spray deposition and characterization of zirconium-oxide thin films

Ortíz¹,

Alonso²,

Haro‐Poniatowski

2005

Journal of Elec Materi

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“…Thicker dielectric layer prevents gate leakage current arising from direct quantum mechanical tunneling provided high-k material has large band gap that yields high barrier height. Several high-k gate oxides Ta 2 O 5 [6], CeO 2 [7], ZrO 2 [8], HfO 2 [9], BaSrTiO 3 [10] and Y 2 O 3 [11,12] have been widely studied. Conceptually, high-k materials are attractive and physics of CMOS device operation with high-k gate is simple, but technologically, its integration with Si has several problems.…”

Section: Inroductionmentioning

confidence: 99%

Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

Rastogi

Desu

2004

J Electroceram

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Integration of Y 2 O 3 high-k thin film over Si as gate dielectric in high performance CMOS and highdensity MOS memory storage capacitor devices is described. Y 2 O 3 film growth by low-pressure chemical vapor deposition induces interfacial reactions and complex SiO 2−x layer growth. It has a graded structure, in crystallineSiO 2 form at Y 2 O 3 side and amorphous SiO 2−x form at Si side. MIS devices based on Y 2 O 3 /SiO 2 -SiO 2−x composite dielectric integrated with Si show high frequency C-V behavior indicative of inversion to accumulation changes in capacitance. Observed bi-directional hysterisis in C-V is detrimental to the functioning of storage capacitor in memory function. Detailed investigation of this effect led to understanding of gate bias controlled emission of carriers as responsible mechanism. Observed anomalous increase in inversion capacitance at low frequency is attributed to additional charges transferred from SiO 2−x /Si interface states. Leakage current and injected charge carrier transport across bilayer interface is dominated by Poole-Frankel (PF) process at low fields and by Fowler-Nordhiem (FN) at high fields. This investigation provides a greater understanding of the complex nature of integration of Y 2 O 3 films.

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“…[6,7] Zirconia's optical properties, [8,9] and especially photoluminescence (PL) properties, have been seldom reported, although PL has already been observed in a ZrO 2 sol and nanoparticle system. [10] In optical memory systems, the storage density of compact disks (CDs) based on GaAlAs lasers (recording wavelength (RW) = 780 nm) is 0.25 Gbit in.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Room‐Temperature Ultraviolet Photoluminescence Properties of Zirconia Nanowires

Cao

Qiu

Luo

et al. 2004

Adv Funct Materials

173

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This paper reports the synthesis of tetragonal zirconia nanowires using template method. An as‐prepared sample was characterized by scanning and transmission electron microscopy. It was found that the as‐prepared materials were tetragonal zirconia nanowires with average diameters of ca. 80 nm and length of over 10 μm. The Raman spectrum showed peaks at 120, 461, and 629 cm–1, which are attributed to the Eg, Eg, and B1g phonon modes of the tetragonal zirconia structure, respectively. The UV‐vis absorption spectrum showed an absorption peak at 232.5 nm (5.33 eV in photon energy). Photoluminescence (PL) spectra of zirconia nanowires showed a strong emission peak at ca. 388 nm at room temperature, which is attributed to the ionized oxygen vacancy in the zirconia nanowires system.

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Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si

Cited by 32 publications

References 9 publications

Spray deposition and characterization of zirconium-oxide thin films

Spray deposition and characterization of zirconium-oxide thin films

Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

Synthesis and Room‐Temperature Ultraviolet Photoluminescence Properties of Zirconia Nanowires

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