Electrical characteristics of WSe2 transistor with amorphous BN capping layer

Temperature Dependence of the Dielectric Function and Critical Points of Monolayer WSe2

“…Due to its unique photoelectric properties [1][2][3][4][5][6][7][8] , including layer-modulated bandgaps, moderate mobility 2 , a high on-off ratio 9 , and a noticeable spin-orbit coupling effect 1 , the monolayer transition-metal dichalcogenide (TMDC) WSe 2 has recently garnered signi cant interest in the elds of atomically thin electronics and optoelectronics [10][11][12][13] . The utilization of monolayer WSe 2 , whether in its intrinsic form or as part of tailored heterostructures hybridized with other materials, substantially enhances the performance of related optoelectronic devices and imparts a range of unique features to them 9 . The intrinsic optical and dielectric properties of monolayer Wse 2 , typically described by the dielectric function or the complex refractive index 14,15 , exert a strong in uence on the performance of these optoelectronic devices.…”

Temperature dependence of the dielectric function and critical points of monolayer WSe2

“…Due to its unique photoelectric properties 1 – 8 , including layer-modulated bandgaps, moderate mobility 2 , a high on–off ratio 9 , and a noticeable spin–orbit coupling effect 1 , the monolayer WSe 2 , a two-dimensional transition-metal dichalcogenide (2D-TMDC) has recently garnered significant interest in the fields of atomically thin electronics and optoelectronics 10 – 13 . The low dimensional materials have strong Coulomb interaction by reducing dielectric screening and confining electron motion spatially, leading to the formation of highly stable, tightly bound electron–hole pairs known as excitons, characterized by substantial binding energy 14 , 15 .…”

“…The low dimensional materials have strong Coulomb interaction by reducing dielectric screening and confining electron motion spatially, leading to the formation of highly stable, tightly bound electron–hole pairs known as excitons, characterized by substantial binding energy 14 , 15 . The utilization of monolayer WSe 2 , whether in its intrinsic form or as part of tailored heterostructures hybridized with other materials, substantially enhances the performance of related optoelectronic devices and imparts a range of unique features to them 9 . The intrinsic optical and dielectric properties of monolayer WSe 2 , typically described by the dielectric function or the complex refractive index 16 , 17 , exert a strong influence on the performance of these optoelectronic devices.…”

Non‐Volatile Reconfigurable p–n Junction Utilizing In‐Plane Ferroelectricity in 2D WSe2/α‐In2Se3 Asymmetric Heterostructures

“…Since the first experimental realization of the monoatomic graphene layer, [1] 2D structures have drawn enormous attention due to their exceptional properties such as high surface to volume ratio, tunable bandgap, [2,3] dangling-bonds free interface, DOI: 10.1002/adfm.202306682 high thermal and electrical conductivities, [4,5] chemical sensitivity, [6] etc. Among them, transition metal dichalcogenides (TMDCs), particularly ambipolar WSe 2 , show ultra-high photoresponsivity, [7] , high-speed chargetransfer dynamics, [8] and superior on-off ratio, [9,10] which makes it a promising material for novel optoelectronic devices. [11][12][13] Ever since the semiconductors' discovery, the p-n junction has become an essential circuit element in modern electronics.…”