Electrical characteristics of TiN contacts to N silicon

Abstract

We have performed a detailed investigation of TiN contacts on n-type silicon. The barrier height was found to be 0.49±0.01 V and the contact resistivity on 0.001-Ω cm substrates below 10−4 Ω cm2. The TiN layers were produced by reactive sputtering. The resistivity of the layers depends on the partial pressure of N2 in the N2+Ar sputtering gas mixture. A minimum of 55 μΩ cm was obtained, which is below the resistivity of pure Ti films. Finally, we have developed two etching solutions which allow patterning of TiN layers using conventional photolithography techniques.

Size dependent interface energy and its applications

“…The transition metal carbides (TMC) and the transition metal nitrides (TMN) have been widely applied as the layers of cutting tools, electrically conducting diffusion barriers in electronic devices, in coatings for solar applications and for corrosion protection [151,152]. All of these applications due to their unique properties (e.g.…”

Development of a process simulation capability for the formation of titanium nitride diffusion barriers

“…While none of the films have resistivities approaching that of bulk TiN (22 pohm-cm), film resistivity is known to increase from the bulk value in TiN, films when x > 1 or 0 c x < 1. 57 Thus, these results suggest that compositional changes occur in the films as the inlet gas composition is varied.…”

A composite catalytic film of Ni-NPs/PEDOT: PSS for the counter electrodes in dye–sensitized solar cells

“…Their electro-catalytic ability is comparable to that of Pt [12][13][14]. Some of these transition metal compounds show not only a remarkable electro-catalytic ability, but also a good conductivity [15,16]. These transition metal compounds also find other applications, e.g., super capacitors [17], fuel cells [18], and sensors [19].…”