Electrical Characteristics of Schottky Contacts on GaN and Al_0.11Ga_0.89N

Abstract

The electrical characteristics of Ag, Ti, Au, Pd and Ni Schottky contacts on GaN and Al0.11Ga0.89N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al0.11Ga0.89N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al0.11Ga0.89N Schottky contacts. The pinning degree of GaN and Al0.11Ga0.89N are much less than GaAs, Si and GaP, but both of them may be similar to CdS.

Graphene-GaN Schottky diodes

“…3(c). Note that the D s (V) values are in the range of ~10 13 states/cm 2 /eV, which are consistent with the reported values (~1-2 × 10 13 states/cm 2 /eV) for the conventional contacts formed on GaN [57,58]. Particularly, the D s (V) showed a bellshaped behavior with its maximum at around ~0.8 eV, indicating that the deep-level states are located 0.8 eV below the conduction band (E C ) edge.…”

“…The fact that the S parameter of our sample is slightly higher than those reported in the literature (0.385 [57] and 0.41 [58]) can be attributed to the better epitaxial quality of our GaN film. Consequently, the bare surface barrier height  s can be estimated to be as high as 2.9 eV, indicating that the large Φ B,m of graphene is essentially associated with large upward surface band bending or surface Fermi-level pinning.…”

“…Here,  i and t i , which are unknown parameters, were assumed to be the permittivity of free space and 5 Å, respectively, so as to compare our obtained D s value with those of Cowley and Sze [55,56], Schmitz et al [57], and Arulkumaran et al [58]. Using Eq.…”

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

“…4 there is no surface accumulation in GaN. This is consistent with well established fact that the surface Fermi energy is pinned in the band gap leading to surface electron depletion in this material [21].…”

Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN

“…The insertion of different metals between Ni/Au has been performed with the aim improving the electrical properties of Schottky diodes [8]. To achieve Schottky diodes on n-AlGaN, metals with a high work function are required [9,10]. Ni (ϕ m = 5.15 eV) and Au (ϕ m = 5.1 eV) were chosen not only because of this fact but because, amongst other properties, the former adheres well to AlGaN whilst the latter is a good conductor.…”