Electrical characteristics of proton-implanted vertical-cavity surface-emitting lasers

Ramaswamy, Anand; Ziel, J. P. van der; Biard, J.R.; Johnson, R.H.; Tatum, Jim A.

doi:10.1109/3.726619

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…where R c is the constant resistance component which is independent of the total current I, and [16], [17]. The analysis results of the forward ESD pulse accumulation test are summarized in Table 2, which lists the model parameters used for the equivalent circuit model.…”

Section: R R R R R I Imentioning

confidence: 99%

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

Kim¹,

Kim²,

Kim³

et al. 2008

ETRI Journal

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Taeyong Kim et al. 833 The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

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Section: R R R R R I Imentioning

confidence: 99%

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

Kim¹,

Kim²,

Kim³

et al. 2008

ETRI Journal

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“…The resulting perimeter current for this device is (19) where , is the radius to the edge of the VCSEL junction, and the ideality factor is measured to be 1.907 for our devices. This value is about the same for oxidedefined or proton-implanted 850-nm VCSELs [8] because the quasi-Fermi level is always pinned at the perimeter of an AlGaAs/GaAs junction, causing an current at the junction perimeter.…”

Section: Surface Recombinationmentioning

confidence: 61%

“…A degeneracy correction for the spontaneous current is necessary above threshold [9]. The surface recombination current [8] at the edge of the device is included in the model as shown in Fig. 2.…”

Section: Description Of the Modelmentioning

confidence: 99%

“…Process monitors are used during VCSEL fabrication to measure the sheet resistances of the p-DBR mirror and the region under the oxide layer along with the surface recombination current [8]. These measured values, shown in Table I for a particular VCSEL structure, are used in our SPICE-like model to find the current distribution within the VCSEL as a function of bias current.…”

mentioning

confidence: 99%

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An Iterative Model for the Steady-State Current Distribution in Oxide-Confined VCSELs

Chuang

Biard

Guenter

et al. 2007

IEEE J. Quantum Electron.

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Abstract-This paper presents an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a SPICE-like approach. The model includes a degeneracy correction for operation at and above threshold. The effect of the resistance due to the p-distributed Bragg reflector (p-DBR) mirror layers and the oxide layer on performance is investigated. Higher sheet resistance under the oxide layer reduces the threshold current, but reduces the current range over which single transverse mode operation occurs. The voltage drop across the p-DBR region dominates spatial hole burning, which is moderated by lateral drift and diffusion. This simple iterative model is applied to commercially available oxide-confined VCSELs.Index Terms-Drift and diffusion, semiconductor lasers, spatial hole burning (SHB), surface-emitting laser.

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“…R DBR accounts for the contact resistance and the resistance of the n-and p-doped DBR stacks. The value of this resistance can be extracted by DC I-V measurements [6] and is the main contribute, in the laser region, to the difference between the measured voltage across the laser diode and the voltage across the active layer V F . Usually this resistance assumes values of a few ten Ohms [6,8].…”

Section: Noise Circuit Modelmentioning

confidence: 99%

Coherence functions of the electrical and the optical noises in monomodal packaged vertical cavity surface emitting lasers

2006

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Calculations of the frequency noise spectra and of the coherence functions between the electrical and the optical noises for a single-mode packaged vertical surface emitting laser\ud (VCSEL) are reported.A rate-equation model for an index guided VCSEL is used, implemented with the electrical noise model including the intrinsic device, the package and external bias network. The extended model works up to the laser relaxation frequency. The amplitude optical noise and its correlation with the\ud frequency and electrical noises are also analysed. The influence on the calculated quantities of some electrical and laser parameters is evaluated. The results show that generally the frequency noise is correlated with the electrical noise only at low power near the threshold. Comparisons with existing experimental data show good agreement

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Electrical characteristics of proton-implanted vertical-cavity surface-emitting lasers

Cited by 10 publications

References 20 publications

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

An Iterative Model for the Steady-State Current Distribution in Oxide-Confined VCSELs

Coherence functions of the electrical and the optical noises in monomodal packaged vertical cavity surface emitting lasers

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