Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO<sub>2</sub>films

Ting, W.; Li, P.C.; Lo, G. Q.; Kwong, Dim‐Lee

doi:10.1049/el:19890466

Cited by 3 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some of these properties include better breakdown strength, higher electrical permittivity, improved barrier to impurity diffusion and superior resistance to plasma and radiation damage. These films are being widely employed as masking and passivation layers in microelectronics circuits, in particular in memory cells [1][2][3][4][5] and integrated optical components [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Other alternatives to the nitrided oxide process are low-pressure chemical vapour deposition (LPCVD) [12] and plasma-enhanced CVD (PECVD) [13,14]; these processes avoid a high thermal budget which is not compatible with the requirements of advanced submicron device technology. In all these techniques different species are used as gas precursors, but in particular, NH 3 and N 2 O are the most widely employed gases for nitrogen supply. To the best of our knowledge, the electron cyclotron resonance PECVD (ECR-PECVD) deposition technique has scarcely been used to obtain oxynitride films.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Hernández

Garrido

Martinez

et al. 1997

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Silicon oxynitride layers were deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD). Oxygen, nitrogen and 5% argon diluted silane were used as precursors. The gas composition in the plasma was varied over a wide range to get compositions from pure SiO 2 to SiO x N y layers with around 20% O content. Large N 2 /O 2 flow ratios are required to get significant N concentrations in the SiO x N y deposited layers. Pure Si 3 N 4 layers could only be obtained when O 2 flow was completely suppressed. The infrared spectra of ECR SiO 2 are very similar to those of thermally grown oxides, but significant differences were found between the ECR and the high-temperature CVD Si 3 N 4 spectra. MOS devices fabricated with these layers show that the interface state density increases from about 10 11 to 10 12 cm −2 eV −1 when the layer composition changes from pure SiO 2 to pure Si 3 N 4 .

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Hernández

Garrido

Martinez

et al. 1997

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics

Ting

et al. 1991

Solid-State Electronics

View full text Add to dashboard Cite

SiO ₂ Waveguide Resonator Used in an Integrated Optical Gyroscope

Zhang

Feng

et al. 2009

Chinese Phys. Lett.

View full text Add to dashboard Cite

An integrated optical waveguide resonator based on a SiO2 waveguide is proposed, fabricated and tested. The method of designing the resonator is also presented. The optimal splitting ratio of the coupler is gained by simulating the relationship between the splitting ratio of the key coupler in the resonator and the resonator's finesse with resonance depth. The calculated fundamental detection limit of this integrated optical waveguide resonator is 1.6 ∘ /h. Finally, a micro-optical gyroscope system based on the integrated waveguide resonator is built, and the measured resonator's finesse 𝐹 is close to 70 under fluctuating temperature. To the best of our knowledge, the present 𝐹 is the best result to date. For the coupler splitting rate the experimental results have fixed errors with the simulation results caused by fabrication processes which can be easily eliminated, implying that the method of design is effective and applicable.

show abstract

Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO₂films

Cited by 3 publications

References 0 publications

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics

SiO ₂ Waveguide Resonator Used in an Integrated Optical Gyroscope

Contact Info

Product

Resources

About

Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO2films

Cited by 3 publications

References 0 publications

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics

SiO 2 Waveguide Resonator Used in an Integrated Optical Gyroscope

Contact Info

Product

Resources

About

Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO₂films

SiO ₂ Waveguide Resonator Used in an Integrated Optical Gyroscope