Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

Oh, Min Seok; Lee, Jeong Ju; Lee, June Key; Kim, Hyunsoo

doi:10.1016/j.jallcom.2013.09.154

Cited by 13 publications

(8 citation statements)

References 18 publications

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“…The fitting T o value before annealing is in good agreement with the results reported for similar samples in article [9] (T o = 2.3 Â 10 7 K). Following the analysis from article, [11] the T o parameter can be written as…”

Section: Effect Of High-temperature Annealing On the Resistivity Vers...supporting

confidence: 90%

Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Konczewicz

Juillaguet

Zając

et al. 2023

Physica Status Solidi (a)

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In the case of molecular beam epitaxy (MBE), the Mg acceptors are electrically active in the as‐grown material and a priori no additional annealing procedure is necessary. However, there are still some peculiarities in the electrical properties of ammonia‐process grown GaN:Mg and some annealing effect can be observed. Additionally, the character of weak temperature dependence in the vicinity of room temperature suggests that to describe the conduction process an additional conduction channel not related to the free carriers in the valence band must be taken into account. For these reasons, this article presents the results of low‐temperature resistivity and Hall Effect studies of Mg‐doped, ammonia‐process‐grown GaN. The studied samples are grown on low‐temperature buffers of GaN deposited on a sapphire substrate. High‐temperature annealing process (≈800 K) is carried out for all of them. The temperature dependences of the electrical transport properties before and after the annealing procedure are especially investigated at temperatures ranging from 10 up to 300 K. It is found that the low temperatures transport properties are sensitive to the annealing procedure and to describe the observed effects the hopping phenomena must be taken into account.

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Section: Effect Of High-temperature Annealing On the Resistivity Vers...supporting

confidence: 90%

Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Konczewicz

Juillaguet

Zając

et al. 2023

Physica Status Solidi (a)

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“…Detailed analysis about the role of hydrogen atoms on the carrier transport mechanism was reported elsewhere. 41 This improvement in the electrical properties resulted in the reliable enhancement of LED chips. After the removal of hydrogen atoms, LEDs became more robust against the external electric shock in that chips retained slightly better resistance against lifetime tests (20 mA, 1000 h).…”

Section: Methodsmentioning

confidence: 99%

Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

Lee

Hyeon

Tawfik

et al. 2015

Journal of Applied Physics

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Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by $35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region. V C 2015 AIP Publishing LLC. [http://dx.

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“…Si wafer has often been used for the growth of GaN, InGaN, and their alloys for applications in photo-detector, solar cells, and electronic devices. The combination between n-InGaN layers and n-Si wafers were studied to improve the interface layers by using an assortment of approaches [11][12][13][14]. For fabricated electronic devices, the growth of the InGaN layer on n-Si wafers were studied to improve the interface layers by 2 of 10 using a variety of approaches [15][16][17][18][19][20].…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

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Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

Cited by 13 publications

References 18 publications

Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

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