Electrical characteristics of insulating aluminum nitride MIS nanostructures

Abdallah, B.; Al-Khawaja, S.; Alkhawwam, A.

doi:10.1016/j.apsusc.2011.08.119

Cited by 19 publications

(10 citation statements)

References 13 publications

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“…AlN is widely used in electronic and optoelectronic devices, for example, Deep-UV light-emitting diodes 1 and Metal-Insulator-Semiconductor (MIS) devices. 2 High-quality AlN fabrication has been reported with MOCVD. 3,4 However, the growth temperature is generally over 1000 C, which limits the use of low-temperature substrates.…”

Section: Introductionmentioning

confidence: 99%

AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

Miao

Cadien

2021

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

Miao

Cadien

2021

RSC Adv.

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“…A QuadTech low voltage chip component test fixture attached to the Al electrodes on top and to the p-Si, constituting the bottom electrode, made connections to the sample. The electric transport was studied by obtaining the C-V and I-V characteristics using an HP 4192A Impedance Analyzer, QuadTech 1920 LCR Meter and Keithley 237 Source Measure unit [16].…”

Section: Experimental Conditionsmentioning

confidence: 99%

Investigation of the Structural, Electrical and Corrosion Properties of NbN Films Deposited by Magnetron Sputtering (DC Power Supply) Technique at Different Power

Abdallah¹,

Kakhia²,

Alssadat³

et al. 2021

J. Nano- Electron. Phys.

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This study aims to deposit niobium nitride (NbN) thin films on stainless steel (SS304) and silicon (100) substrates using direct current (DC) magnetron sputtering method at different power (varied from 100 to 150 W). The film structure is analyzed by X-ray diffraction (XRD); the patterns show that the films possess a (111) preferred orientation, corresponding to the cubic structure phase. Rutherford elastic backscattering (RBS) and energy dispersive X-ray (EDX) are used to investigate the composition of the prepared films. Surface morphology of the films is explored by scanning electron microscopy (SEM) and atomic force microscopy (AFM) images. AFM images clarify modifications of the morphology, especially roughness versus increased power, where roughness decreased with increasing thickness as well as power. Corrosion and microhardness performances of the films are related and assigned to the crystallinity of samples, which varies with power. Corrosion resistance of NbN films associated with SS304 substrates is improved. These attractive results may allow to use our films in the field of medical tools or equipment (equivalent to saline serum media). Electrical measurements (C-V and I-V) of films deposited at a power of 100 W confirm the potential electrical applications of NbN films deposited by DC sputtering method.

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“…Understanding the underlying leakage current mechanism also is of great importance in order to predict the behavior at elevated temperatures or electric field strengths. In the past, several publications addressed this issue using different substrates and device configurations such as metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) [6,[10][11][12][13]. It can be concluded from these investigations, that the dominating conduction mechanism seems to be strongly dependent on the applied electric field.…”

Section: Introductionmentioning

confidence: 97%

“…The high acoustic velocity of up to 6000 m/s also facilitates the usage of AlN thin films in bulk or surface acoustic wave applications [4,5]. Different deposition techniques are applied for the synthesis of AlN thin films such as molecular beam epitaxy and plasma enhanced chemical vapor deposition [6], atomic layer depo- sition [7] and pulsed laser deposition [8]. In addition, reactive DC magnetron sputtering, being the most commonly used deposition technique, offers low deposition temperatures and good process control.…”

Section: Introductionmentioning

confidence: 99%