Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode

Deniz, Ali Rıza; Çaldıran, Zakir; Taşyürek, Lütfi Bilal

doi:10.1007/s10854-022-09359-3

Cited by 6 publications

(1 citation statement)

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“…The n and Φ b values for Au/ n ‐Si/Al were calculated as 1.76 and 0.69 eV, respectively. Considering that n =1 for an ideal diode, [33] we can say that the organic interface material improves the n value of the diode. This is attributed to the electrical conduction caused by the electron exchange between the donor and acceptor groups of the organic material [34–51] .…”

Section: Resultsmentioning

confidence: 99%

Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture

Erdoğan,

Rıza Deniz,

Çaldıran

et al. 2024

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In this paper, firstly, a new organic material 9 containing triphenylamine (TPA) unit as an electron donor and diaminomaleonitrile (DAMN) unit as an electron acceptor and thiophene scaffold as a π‐linker bridge was designed for diode applications according to D‐π‐A architecture. The organic material 9 was synthesized in four reaction steps with excellent yield (94 %), and fully characterized by 1H NMR, 13C NMR, FTIR, and HRMS spectra. The diode performance properties of the obtained organic material were examined in detail. Current‐voltage (I–V) and capacitance‐voltage (C–V) measurements of this diode were carried out. As a result of the analysis of these measurements, the effect of the organic material used as the interface material on the electrical properties of the diode was analyzed.

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Section: Resultsmentioning

confidence: 99%