Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Abstract

Electrical characteristics of 0"/?45"/90"orientation 0.5 pm CMOSFETs with source/drain regions fabricated by three ion-implantation methods were discussed. For asymmetrical one-sided 7"-implantation method, large device orientation dependent fluctuation and asymmetry were observed in (saturation drain current ID and maximum substrate current IB of both nand p-MOSFETs/threshold voltage VT of p-MOSFETs) and (ID of n-MOSFETs/IB of both nand p-MOSIFETs), respectively. However, almost comparable data were obtained for symmetrical 0"implantation and 7"x4-implantation methods.The symmetrical 7"x4-implantation method was most preferable to obtain symmetrical electrical characteristics for use in LSIs, because of high punchthrough immunity in scaled CMOSFETs.