Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain

Kuo, Po-Chin; Jamshidi-Roudbari, Abbas; Hatalis, Miltiadis K.

doi:10.1063/1.3264839

Cited by 16 publications

(8 citation statements)

References 14 publications

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“…They have superior thermal and electrical conductivities. Moreover, they can offer superior chemical resistance in many environments compared to plastic [2], [3]. In order to improve the thermal dissipation, metallic bonding can be used.…”

Section: Introductionmentioning

confidence: 99%

Characterization of flexible CMOS technology tranferred onto a metallic foil

Philippe

Etangs-Levallois

Latzel

et al. 2015

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

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In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 μm and bond onto a 25-μm-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100°C with an applied pressure of 1.2 bar. The die stack transferred onto the metallic substrate comprises the 200-nm-thick active layer and the 5.5-μm-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that DC and RF performances are invariant after the transfer onto this metallic substrate. Unity-current-gain cutoff and maximum frequencies as high as 163/188 GHz for n-MOSFETs and 100/159 GHz for p-MOSFETs have been measured.

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Section: Introductionmentioning

confidence: 99%

Characterization of flexible CMOS technology tranferred onto a metallic foil

Philippe

Etangs-Levallois

Latzel

et al. 2015

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

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“…More significant degradation occurs when the TFT is bent biaxially and becomes greater with increasing bending. Many studies [8][9][10][11][12] have analysed the failure of TFTs under mechanical stress and found that the threshold voltage drops and the stress increases the trapping of the TFT, affecting the degradation of its electrical properties. In addition, carrier transport is also affected by changes in the effective mass of the carriers, which is caused by strain.…”

Section: Introductionmentioning

confidence: 99%

Strain distribution and electrical characteristics of flexible low-temperature polysilicon thin film transistors under biaxial bending

Fang

Huang

Xie

et al. 2022

J. Phys.: Conf. Ser.

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This paper investigates the strain distribution of flexible p-channel low temperature polycrystalline silicon thin film transistors under biaxial bending. The strain distribution of LTPS TFTs under different bending conditions is analysed by finite element analysis. 𝛆r and 𝛆θ are essentially equal and constant within the load ring. The finite element analysis shows that when the biaxial bending strain condition is 2.5%, the strain distribution is mainly concentrated at the contact angle between the electrode and the oxide layer. This strain is significantly greater than the overall strain of the device, which is the main reason for the bending performance of the device. We found that under biaxial bending, the threshold voltage shifts towards the negative axis as the biaxial strain increases. Within this strain range, these electrical properties are evident under biaxial strain conditions. Comparing theoretical threshold voltage shifts based on energy band changes with experimental results under biaxial strain, it was found that changes in trap density should also contribute to the threshold voltage shift.

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“…Flexible displays have attracted considerable attention as next-generation displays that are flexible, light, and not easily breakable [ 1 ]. As the active layer in flexible displays, many materials have been used, such as amorphous silicon [ 2 , 3 ], low-temperature polycrystalline silicon [ 4 , 5 ], semiconductor oxides [ 6 , 7 ], and organic materials [ 8 , 9 ]. Amorphous indium-gallium-zinc-oxide (a-IGZO) films offer the advantages of high mobility, small sub-threshold swing, low leakage current, and good uniformity owing to their amorphous phase, which makes them suitable for manufacturing large-area displays [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length

2021

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The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.

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Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain

Cited by 16 publications

References 14 publications

Characterization of flexible CMOS technology tranferred onto a metallic foil

Characterization of flexible CMOS technology tranferred onto a metallic foil

Strain distribution and electrical characteristics of flexible low-temperature polysilicon thin film transistors under biaxial bending

New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length

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