Electrical characterisation of ruthenium Schottky contacts on n-Ge (100)

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

“…However, the negative temperature coefficient suggests that the barrier height should be higher at low temperatures as at such the electrons will have lesser energy to surmount the barrier. From the gradient of the least squares fits on the linear regions of I-V plots, n was obtained as [32] The value of n decreased with increasing temperature from 1.62 at 300 K to 1.15 at 700 K to 1.20 at 800 K. Such a variation of ideality factor is unexpected since the variation of n and ФI-V has shown linear correlation behavior in past studies [33]. This result was observed repeatedly and might be attributed to the formation of the Pd3Si phase during silicidation of silicon carbide in the 673-873 K range might be responsible [25].…”

Rhodium Germanide Schottky Barrier Contacts

“…[2][3][4][5][6] Out of all possible germanides Ni/Ge [7][8][9] and Pt/Ge [9][10][11][12] have already gained wide attention in research. Three other combinations of platinum group metals, namely Ir/Ge, Pd/Ge and Ru/Ge have been already investigated by A. Chawanda, et al [13][14][15] A material combination not yet examined for the use as Schottky contact is rhodium-germanide (Rh-Ge). Only few reports exist on Rh x Ge y compounds, like phase diagrams by Zhuravlev et al, 16 crystallographic studies by M. Wittmer et al 17 and X-ray Diffraction/ resistivity measurements on Ge(001) by S. Gaudet et al 18 Contrary to rhodium germanide, the Rh-Si silicide has already undergone investigation by different means.…”