Electrical behaviour related to structure of nanostructured GeSi films annealed at 700&amp;#x00B0;C

Lepadatu, Ana-Maria; Stavarache, Ionel; Maraloiu, Valentin-Adrian; Palade, Catalin; Serban, T.; Magdalena, Ciurea Lidia

doi:10.1109/smicnd.2012.6400683

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“…These NCs present unique and interesting size-dependent physical properties for a wide range of application including lighting, non-volatile memories, and electronic and photovoltaic applications [1–3]. SiGe nanostructures exhibit a stronger quantum confinement effect than Si NCs [4] and have the advantage of a bandgap fine-tuning by varying the Ge atomic fraction [5–6]. These properties are useful for optoelectronic devices working in the visible to far-infrared region [4,7].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Sultan

Maraloiu

Stavarache

et al. 2019

Beilstein J. Nanotechnol.

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Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nanoparticles (2.1 ± 0.8 nm) in the as-grown structure, and that presence of such nanoparticles acts as a seed for heterogeneous nucleation, which upon annealing results in the periodically arranged columnar self-assembly of SiGe core–shell nanocrystals. An increase in photocurrent intensity by more than an order of magnitude was achieved by annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequential interface characteristics and its effect on the photocurrent spectra.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Sultan

Maraloiu

Stavarache

et al. 2019

Beilstein J. Nanotechnol.

Self Cite

View full text Add to dashboard Cite

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Electrical behaviour related to structure of nanostructured GeSi films annealed at 700°C

Cited by 1 publication

References 16 publications

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

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Electrical behaviour related to structure of nanostructured GeSi films annealed at 700&#x00B0;C

Cited by 1 publication

References 16 publications

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

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Electrical behaviour related to structure of nanostructured GeSi films annealed at 700°C

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study