Electrical behaviour of electron-beam-evaporated yttrium oxide thin films on silicon

Sharma, Rina; Lakshmikumar, S.T.; Rastogi, A. C.

doi:10.1016/0040-6090(91)90045-y

Cited by 44 publications

(18 citation statements)

References 5 publications

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“…Y 2 O 3 :Eu 3? films have been grown using various deposition techniques [4][5][6]. However, because of its high melting point of about 2400°C, Y 2 O 3 :Eu 3?…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

2016

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Pulse laser deposition was used to obtain nanocrystalline red-emitting Y 2 O 3 :Eu 3? thin-film phosphors. X-ray diffraction measurements show that the un-annealed thin film was amorphous, while those annealed were crystalline. At lower annealing temperature of 600-700°C, cubic bixbyite Y 2 O 3 :Eu 3? was formed. As the annealing temperatures were increased to 800°C, hexagonal phase emerged. The average crystallite size of the film was 64 nm. Photoluminescence measurement indicates intense red emission around 612 nm due to the 5 D 0 ? 7 F 2 transition. Scanning electron microscopy indicated that agglomerates of noncrystalline particles with spherical shapes were present for the un-annealed films. After annealing at high temperature, finer morphology was revealed. Atomic force microscopy further confirmed the formation of new morphology at the higher annealing temperatures. UV-Vis measurement indicated a band gap in the range of 4.6-4.8 eV. It was concluded that the annealing temperature played an important role in the luminescence intensity and crystallinity of these films.

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“…Y 2 O 3 :Eu 3? films have been grown using various deposition techniques [4][5][6]. However, because of its high melting point of about 2400°C, Y 2 O 3 :Eu 3?…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

2016

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“…The latter two properties make the material well suited for optical applications and several deposition techniques have been investigated in deposition of Y 2 O 3 thin films by: epitaxial growth, RF magnetron sputtering, electron beam evaporation, laser ablation reactive ionized cluster beam deposition and molecular beam epitaxy [5][6]. The other two materials used in this work are well known (deposition and optical properties): SiO 2 and TiO 2 .…”

Section: Introductionmentioning

confidence: 99%

“…Yttrium oxide (Y 2 O 3 ), has recently attracted a lot of attention because of its several particularly interesting physical properties, such as its crystallographic stability up to 2325 ºC (melting point of Y 2 O 3 is 2450 ºC) [5], high mechanical strength, high thermal conductivity (0.13 Wcm −1 K −1 ), a relatively high dielectric constant in the range 14-18 [8], a rather high refractive index and a very-low extinction coefficient. The latter two properties make the material well suited for optical applications and several deposition techniques have been investigated in deposition of Y 2 O 3 thin films by: epitaxial growth, RF magnetron sputtering, electron beam evaporation, laser ablation reactive ionized cluster beam deposition and molecular beam epitaxy [5][6].…”

Section: Introductionmentioning

confidence: 99%

UV Bandpass Optical Filter for Microspectometers

2007

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This paper describes the design and modeling of a UV bandpass optical filter for microspectrometers. The materials used for fabricating the multilayer UV filter are: silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ) and yttrium oxide (Y 2 O 3 ). The optical filter shows a bandpass response wavelength in the range 230-280 nm, with a transmittance higher than 80%. Such a device is extremely suitable for optical detection of biological molecules with optical absorption or/and fluorescence in the UV spectral range. This UV optical filter can be built using post-processing after integrated-circuit and UV photodiode fabrication in a bipolar or CMOS technology. The dielectric multi-layer stack can be deposited on top of the UV photodiode after the standard technology process has been completed. The number of layers was optimized for 11 with all layers of a thickness acceptable for reproducible fabrication. The materials used for fabricating the UV filter are silicon compatible. Applications presented are in DNA solutions (to measure the optical density of these solutions at 260 nm) and in the detection of a gas flame in the presence of ambient light based on the different emission spectra in the UV.

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“…[1][2][3][4][5]7,8) As-deposited films produced by electron beam evaporation were mainly amorphous and only transformed into crystalline phase upon annealing at moderate temperature. On the other hand, conventional CVD process has produced films with very low deposition rates in the range of around several mm/h, and therefore obtaining films with the desired thickness need a significantly long deposition time.…”

Section: Introductionmentioning

confidence: 99%

High Speed Deposition of Y<SUB>2</SUB>O<SUB>3</SUB> Films by Laser-Assisted Chemical Vapor Deposition

2005

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Thick yttria (Y 2 O 3 ) films were synthesized at high speeds by laser-assisted chemical vapor deposition (LCVD) using an Y(dpm) 3 (dpm = dipivaloylmethanate) precursor. The effects of deposition conditions on the deposition rate and their microstructure were investigated. While the deposition rate was less than a few microns per hour at low laser powers (P L ) less than 100 W, significantly high deposition rates of more than 200 mm/h (56 nm/s) were obtained at P L more than 160 W. The highest deposition rate in this study was 300 mm/h (83 nm/s) being 100 to 1000 times greater than those of conventional CVD processes. Deposited films were dense and isotropic with no preferred orientation showing cauliflower-like microstructure.

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Electrical behaviour of electron-beam-evaporated yttrium oxide thin films on silicon

Cited by 44 publications

References 5 publications

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

UV Bandpass Optical Filter for Microspectometers

High Speed Deposition of Y<SUB>2</SUB>O<SUB>3</SUB> Films by Laser-Assisted Chemical Vapor Deposition

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