Electrical behaviour of chemically modified amorphous Se studied by xerographic depletion discharge

Reduction of the dark current in stabilized a-Se based X-ray detectors

“…The double detector structures have low dark currents and allow high fields to be used thereby increasing the detector performance. There is no need to dope the a-Se with an alkali element to generate the n-layer, which is a distinct advantage since alkaline doping tends to encourage crystallization [5].…”

“…The objective of the present work was to investigate whether there are other means for reducing the dark current in a-Se based X-ray detector structures without having to dope a-Se with Na, since alkali dopants tend to encourage crystallization in a-Se [5]. We have been able to develop fabrication techniques and device structures that can provide low dark currents that allow these new structures to be usable in X-ray detectors as discussed below.…”

Dependence of the electrical properties of stabilized a-Se on the preparation conditions and the development of a double layer X-ray detector structure

“…The goal of the present work is to develop a detector structure with a low dark current without alkali dopants because they tend to induce crystallization of a-Se [6]. As we have shown recently [7], the hole range l h s h depends on the substrate temperature during fabrication, and an a-Se layer deposited at a low substrate temperature can be n-like, i.e.…”

Electronic and thermal properties of magnesium‐doped a‐Se films

“…Group IA dopants, however, have been found to encourage crystallization in a-Se [3]. Initial work conducted on Group IIA dopants such as Mg, Ca and Ba have shown that these dopants in the 100 ppm range in a-Se increase the electron lifetime and reduce hole lifetime while the thermal stability of the films is reduced [4].…”