Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals

Horváth, Zs. J.; Dózsa, L.; Krafcsik, Olga H.; Mohácsy, T.; Vida, Gy.

doi:10.1016/j.apsusc.2004.05.067

Cited by 17 publications

(7 citation statements)

References 6 publications

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“…It has been well known that there are currently a vast number of reports on experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky barrier diodes (SBDs) and solar cells of I-V characteristics which are still intensively studied [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. In addition, there are a vast number of theoretical studies on these devices [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures

Dökme

Altındal

2006

Semicond. Sci. Technol.

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In this study, we have investigated the intersection behaviour of forward and reverse bias current-voltage (I-V ) characteristics of Al/SiO 2 /p-Si Schottky diodes in the temperature range of 79-325 K. The crossing of the experimental semi-logarithmic ln(I )-V curves appears as an abnormality when seen with respect to the conventional behaviour of ideal Schottky diodes. Experimental results show that this crossing of ln(I )-V curves is an inherent property of even Schottky diodes. The ideality factor n was found to decrease, while the zero-bias Schottky barrier height (SBH) B0 increases with increasing temperature. The conventional Richardson plot is found to be nonlinear in the temperature range measured. However, the ln(I 0 /T 2 ) versus 1000/nT plot gives a straight line corresponding to activation energy 0.233 eV. It is shown that the values of series resistance R s estimated from Cheung's method were strongly temperature dependent and abnormally increased with increasing temperature. In addition, the temperature dependence of energy distribution of interface states density N ss profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height e and ideality factor n. All these behaviours indicate that the thermionic emission (TE) cannot be the main current transport mechanism, especially at low temperatures.

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Section: Introductionmentioning

confidence: 99%

“…They discussed the so-called analytically and numerically generated I-V curves in their works. In addition, Horvath et al studied its temperature dependence in Al/SiO 2 /p-Si Schottky diodes [14]. They observed the forward bias I-V curves intersection at room temperature.…”

Section: Introductionmentioning

confidence: 99%

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures

Dökme

Altındal

2006

Semicond. Sci. Technol.

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“…To extract the BH, one normally uses a conventional TE theory. However, there have been several reports about deviation from this classical TE theory . To determine the BH in another way, the Richardson plot is drawn.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Reddy

Kang

Lee

et al. 2013

J of Applied Polymer Sci

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In this work, we have investigated the electrical properties of Au/n‐InP contacts with a thin layer of polyvinyl alcohol (PVA) as an interlayer. The current–voltage (I–V) and capacitance–voltage (C–V) measurements are carried out in the temperature range of 175–425 K. The Au/PVA/n‐InP Schottky structure show nonideal behaviors and indicates the presence of a nonuniform distribution of interface states. The temperature dependent interface states densities (NSS), ideality factor n(V,T) and barrier height φb(V,T) are obtained. An abnormal decrease in zero‐bias barrier height (BH) and increase in the ideality factor ( n) with decreasing temperature have been explained on the basis of the thermionic emission theory with Gaussian distribution (GD) of the BHs due to the BH inhomogeneities. The experimental I–V characteristics of Au/PVA/n‐InP Schottky diode has revealed the existence of a double GD with mean BH values of ( φ¯bo) of 1.246 and 0.899 eV and standard deviation ( σo) of 0.176 and 0.137 V, respectively. Consequently, the modified conventional activation energy ln⁡(Io/T2)−(q2σo2/2kB2T2) versus 103/T plot gives φ¯bo and Richardson constants ( AR*) and the values are 1.17 and 0.71 eV and 9.9 and 6.9 A/cm2 K2, respectively, without using the temperature coefficient of the BH. The effective Richardson constant value of 9.9 A/cm2 K2 is very close to the theoretical value of 9.4 A/cm2 K2 for n‐InP. The discrepancy between Schottky barrier heights estimated from I–V and C–V measurements is also discussed. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 39773.

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“…For a SBD in the presence of an insulator layer and other effects, the current depends on the bias voltage. Thermionic emission (TE) theory predicts that the currentvoltage characteristic is given as follows [14][15][16][17][18][19][20][21][22][23][24]:…”

Section: Resultsmentioning

confidence: 99%

“…The high values of the ideality factor show that there is a deviation from the TE theory for the current mechanism. The increase in the ideality factor with decreasing temperature is known as the tunnelling effect [19,22,[28][29][30]. If the current transport is controlled by the tunnelling field effect (TFE) theory due to the local enhancement of electric field, which can also yield a local reduction of the BH, the relationship between the ideality factor and temperature can be expressed by [22,28]…”

Section: Resultsmentioning

confidence: 99%

Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device

Kavasoğlu¹,

Tozlu²,

Pakma³

et al. 2009

J. Phys. D: Appl. Phys.

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In this study, temperature dependent current–voltage (I–V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value displayed nearly temperature independent behaviour, the ideality factor varied between 7.26 and 2.76 in the temperature range 100–300 K. There is a linear relationship between the barrier height and the ideality factor which is attributed to barrier height inhomogeneities in the Au/poly(4-vinyl phenol)/p-Si device. The temperature dependent ideality factor behaviour shows that thermionic field emission theory is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 65 meV. It is concluded that poly(4-vinyl phenol) is a preferable organic insulator layer with low interface state density because the temperature dependent interface state density calculations give values of the order of 1012 eV−1 cm−2.

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Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals

Cited by 17 publications

References 6 publications

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device

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Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals

Cited by 17 publications

References 6 publications

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device

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On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures

On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO₂/p-Si (MIS) Schottky diodes at low temperatures