Electrical and Thermal Bias‐Driven Negative Magnetoresistance Effect in an Interacting Quantum Dot
Rui Bo,
Yi Tang,
Can Li
et al.
Abstract:Spin‐dependent electron transport is theoretically studied for a system with an interacting quantum dot sandwiched between a pair of ferromagnetic electrodes. By separately applying an electrical bias or a temperature gradient across the junction, a spin‐polarized current can be obtained and controlled by tuning the gate voltage. Interestingly, regardless of whether the electron transport is driven by the bias voltage or temperature difference, the current in the device always exhibits negative magnetoresistan… Show more
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