2021
DOI: 10.1109/jphotov.2020.3030191
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Electrical and Temperature Behavior of the Forward DC Resistance With Potential Induced Degradation of the Shunting Type in Crystalline Silicon Photovoltaic Cells and Modules

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Cited by 8 publications
(3 citation statements)
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“…Temperature, humidity, UV radiation, and dust accumulation significantly accelerate degradation by promoting defects [26][27][28][29][30]. Characterization methods like electroluminescence imaging, infrared thermography, and current-voltage tracing enable effective evaluation of degradation impacts on efficiency and power output [31][32][33][34][35][36][37][38][39][40].…”
Section: Discussionmentioning
confidence: 99%
“…Temperature, humidity, UV radiation, and dust accumulation significantly accelerate degradation by promoting defects [26][27][28][29][30]. Characterization methods like electroluminescence imaging, infrared thermography, and current-voltage tracing enable effective evaluation of degradation impacts on efficiency and power output [31][32][33][34][35][36][37][38][39][40].…”
Section: Discussionmentioning
confidence: 99%
“…The open-circuit voltage drop is due to the reduction of the shunt resistance (parallel resistance) of the PID module. This can also be exempli ed by the cells' shunting (blackout/dark) when EL images are captured [19][20][21].…”
Section: Introductionmentioning
confidence: 95%
“…One of the main degradation mechanisms is called potential-inducted-degradation (PID) [1][2][3]. For many PV systems, PID is one of the leading causes of module degradation caused by the high voltage between the encapsulants and the front glass surface, which is grounded via the substructure of the cell or the frame [4].…”
Section: Introductionmentioning
confidence: 99%