Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering

“…Based on a standard thermionic-emission (TE) model, the electrical characteristics of diode can be calculated (for qV N 3kT) with the aid of following equation [10,11,17,18]:…”

“…They can be derived by the equation below: Fig. 5 can be fitted with a linear equation (y = A + Bx) with its slope in high-voltage region for the series resistance R s and its intercepts for the ideality factor n [11,17,21]. The series resistances R s and ideality factor n can be determined to decrease from 1613 Ω and 6.6 at 25°C (device-A) to 213 Ω and 3.1 at 150°C (device-C).…”

“…An apparent drop in the series resistance of hetero-junctions occurs at the higher test temperature. In addition, the carrier concentration was also determined to be N d = 6.1 × 10 16 Some previous reports showed the breakdown voltage of~15 V for hetero-junction diodes and the breakdown voltage of~10 V for homojunction diodes [2,5,8,11,17]. Although the reported diodes made by MOCVD had the epitaxial growth of their semiconductors, their deposition was conducted at high temperatures above 800°C.…”

“…The importance for the homo-junction, hetero-junction, and Schottky diodes made by nitride semiconductor materials needs to achieve the lower turn-on voltage, smaller leakage current, and larger breakdown voltage [9][10][11]. Among electronic devices, the combined hetero-junctions of n-GaN and its alloys with p-Si wafers were produced by using a variety of approaches.…”

“…In this study, the technique of radio-frequency (RF) reactive sputtering has been chosen as a method to directly grow the n-In x Ga 1 − x N films on p-Si substrate without a buffer layer for heterojunction diodes. The advantages of using the sputtering technique included low sputtering temperature, low equipment cost, and secure working Thin Solid Films 589 (2015) 182-187 atmosphere without using the toxic metal-organic precursors and ammonia [9][10][11]. The electrical I-V characteristics of devices were determined by thermionic-emission (TE) mode at the wide testing temperatures.…”