Electrical and structural properties of buried CoSi2 layers in Si(100) grown by molecular beam allotaxy

Dolle, M.; Gassig, U.; Bay, H.L.; Schüppen, A.; Mantl, S.

doi:10.1016/0040-6090(94)90371-9

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…The single-crystalline CoSi 2 layers were characterized by a small specific electrical resistivity of 13 µ cm at RT and close to 1 µ cm at 4.2 K [52]. The temperature dependence of the resistivity followed the Bloch-Grüneisen relation, as expected for metals.…”

Section: The Growth Of Si/cosi 2 /Si(100) Heterostructuresmentioning

confidence: 54%

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Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growth of the matrix persists from the substrate through the spacings between the inclusions to the overlayer. The precipitates coarsen and coalesce into a uniform layer during a subsequent high-temperature treatment, the second processing step. We discuss the present theoretical model of the layer formation during annealing which is based on inhomogeneous Ostwald ripening and particle coalescence. We place particular emphasis on the growth of precipitates in single-crystalline silicon, since MBA is based on precipitate growth and these nanoparticles exhibit interesting phenomena, such as self-ordering. We discuss the influence of the growth parameters on the layer quality and provide optimized growth and annealing parameters. MBA has been used so far mainly for the growth of epitaxial silicide heterostructures. The metallic disilicide CoSi 2 on Si(100) serves as a model system because of its interesting material properties and its potential for microelectronic and optoelectronic applications. The structural and electrical properties of the obtained epitaxial Si/CoSi 2 /Si(100) heterostructures are reviewed. We also discuss the growth of a ternary silicide, Co 1−y Pd y Si 2 , showing that MBA can be applied also for ternary compounds. We see a great potential in the semiconducting silicides β-FeSi 2 and Ru 2 Si 3 , which can be grown by MBA. As a further test of the MBA method we investigated the growth of a buried SiO x layer in Si(100). The use of epitaxial silicides as compliant substrates and as building blocks for new microelectronic and optoelectronic devices is briefly reviewed.

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Section: The Growth Of Si/cosi 2 /Si(100) Heterostructuresmentioning

confidence: 54%

“…The temperature dependence of the resistivity followed the Bloch-Grüneisen relation, as expected for metals. The Schottky barrier height of MBA-grown CoSi 2 on n-Si was measured to be 0.64 eV [52].…”

Section: The Growth Of Si/cosi 2 /Si(100) Heterostructuresmentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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Interfaces

Hull

Ourmazd

Rau

et al. 2013

Materials Science and Technology

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The sections in this article are Introduction Experimental Techniques Interfaces between Lattice‐Matched, Isostructural Systems Definition Structure Microscopic Structure Mesoscopic and Macroscopic Structure Interfaces Defined by Inhomogeneous Doping Relaxation of Chemical Interfaces Interdiffusion due to Thermal Annealing Intermixing due to Ion‐Implantation Summary Interfaces between Lattice‐Mismatched, Isostructural Systems Lattice Mismatch Strain and Relaxation Mechanisms Origin and Magnitude of Lattice Mismatch Strain Strain Accommodation and Relief Mechanisms Epitaxial Layer Roughening Interdiffusion Misfit Dislocations Competition between Different Relaxation Modes The Critical Thickness for Misfit Dislocation Introduction: Excess Stress Basic Concepts: Single Interface Systems Extension to Multilayer Systems Misfit Dislocation Kinetics Kinetic Relaxation Models Nucleation of Misfit Dislocations Propagation of Misfit Dislocations Interactions of Misfit Dislocations Techniques for Reducing Interfacial and Threading Dislocation Densities Electrical Properties of Misfit Dislocations Summary Interfaces between Crystalline Systems Differing in Composition and Structure Introduction Fabrication of Epitaxial Silicide–Silicon Interfaces Monolayers Reaction Interlayer Mediated Epitaxy Growth of Silicon on Silicides Conglomeration of Silicide Precipitates Epitaxial Elemental Metals Epitaxial Metallic Compounds on III – V Semiconductors Structure, Energetics, and Electronic Properties of M – S Interfaces Epitaxial Silicide–Silicon Interfaces Epitaxial Elemental Metals Intermetallic Compounds on III – V Semiconductors Conclusions Interfaces between Crystalline and Amorphous Materials: Dielectrics on Silicon The Si / Si O 2 System Processing The Si / Si O x N y System Alternative Gate Dielectrics Conclusion

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