Electrical and structural properties of boron and phosphorus co-doped diamond films

Hu, Xiaojun; Li, R.B; Shen, Haiping; Dai, Yong; He, Xiancong

doi:10.1016/j.carbon.2004.01.054

Cited by 57 publications

(26 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This ends in the change of diamond surface electronic properties as well . Furthermore, during the course of high‐temperature treatment, some inactive phosphorus atoms located in interstitial and clustering sites or grain boundaries are movable and possible to be incorporated into substitutional sites, another positive fact for the improvement of electrical properties of these P‐NCD films ,. Once again, the charge transfer mechanism at the n‐type diamond electrode and electrolyte interfaces is still poorly understood.…”

Section: Resultsmentioning

confidence: 99%

Phosphorus‐Doped Nanocrystalline Diamond for Supercapacitor Application

Kato

et al. 2018

ChemElectroChem

View full text Add to dashboard Cite

Heavily phosphorus-doped nanocrystalline diamond (P-NCD) has been grown by using a plasma-enhanced chemical vapor deposition technique and further applied as an electrode for the construction of supercapacitors. This P-NCD electrode shows a capacitance of 11.40 μF cm À 2 in 1.0 M Na 2 SO 4 at a scan rate of 10 mV s À 1 and behaves as a n-type semiconductor electrode in redox-active electrolyte of 0.05 M Fe(CN) 6 3À /4À + 1.0 M Na 2 SO 4 . The post-thermal treatment of as-grown P-NCD films in vacuum at high temperatures for several hours leads to the achievement of much higher capacitances. At the scan rates of 10 and 20 mV s À 1 , the capacitances are up to 2.01 and 63.56 mF cm À 2 for an electrical double layer capacitor and a pseudocapacitor, respectively. Such high capacitances originate from the improved electrical conductivity, varied surface state and surface functional groups, and changed content of noncarbon diamond inside the P-NCD films during the annealing treatment. Therefore, P-NCD films are quite promising as an electrode material for supercapacitor applications.[a] Dr.Electrochemical measurements were carried out on a CHI660E Potentiostat/Galvanostat (Shanghai Chenhua Inc., China) using a standard three-electrode cell, where the P-NCD film acted as the working electrode, an Ag/AgCl (3 M KCl) as the reference electrode, and a coiled Pt wire as the counter electrode. The effective area of the working electrode that exposed to the electrolyte was a circular area of approximately 0.05 cm À 2 . For the construction of diamond EDLCs and PCs, 1.0 M Na 2 SO 4 and 1.0 M Na 2 SO 4 containing 0.05 M K 3 Fe(CN) 6 /K 4 Fe(CN) 6 aqueous solutions were utilized, respectively. Their performance was examined using cyclic voltammetry at different scan rates, the galvanostatic charging/discharging method at different current densities, and electrochemical impedance spectroscopy technique at open circuit potentials in the frequency range of 0.01 to 10 6 Hz.

show abstract

Section: Resultsmentioning

confidence: 99%

Phosphorus‐Doped Nanocrystalline Diamond for Supercapacitor Application

Kato

et al. 2018

ChemElectroChem

View full text Add to dashboard Cite

show abstract

“…Sque et al have also found that species with lower χ , like As or even Sb, lead to more shallow levels than P. However, the low solubility in the crystal makes them unsuitable as n ‐type doping. Yet, despite P being more shallow than N, the resistivity of P‐doped diamond is still high at room temperature . To solve this issue, Schwingenshlögl et al suggested to co‐dope P with nearest neighbors of higher χ .…”

Section: Complex Co‐dopant Electronegativity Symmetry Donor Level mentioning

confidence: 99%

Phosphorus‐Related Complexes and Shallow Doping in Diamond

Alfieri

Kranz

Mihaila

2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

We present a theoretical study of phosphorus‐related complexes in diamond. Presently, phosphorus is the most shallow donor known in diamond, located at 0.56 eV below the conduction band edge. The study examines the possibility of co‐doping P with species of lower or higher electronegativity, in order to obtain a more shallow donor. The effects of electronegativity of the co‐dopant, on the energy position in the band gap of the studied complexes, are analyzed in the light of density functional theory calculations and of group theoretical analysis.

show abstract

“…However, the absence of available n-type diamond has been one of the biggest obstacles for the application of diamond although lots of work has been done [1][2][3][4][5][6][7][8][9][10]. It has been considered that the substitutional P (P s ) is the most available donor in diamond [11][12][13].…”

Section: Introductionmentioning

confidence: 99%