Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering

Bakri, Anis Suhaili; Nafarizal, N.; Shuhaimi, Ahmad; Hasnan, Megat Muhammad Ikhsan Megat; Raship, Nur Amaliyana; Omar, Wan Ibtisam Wan; Azman, Zulkifli; Ali, Riyaz Ahmad Mohamed; Majid, W.H. Abd.; Ahmad, Mohd Khairul; Aldalbahi, Ali

doi:10.1007/s10854-022-08186-w

Cited by 9 publications

(1 citation statement)

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“…A decrease in the sputtering of Al atoms at a nitrogen gas ow rate of 50% further leads to the formation of lattice vacancies containing Al atoms [20], thereby reducing the refractive index of the lm. According to literature reports [22,23], the refractive index of single-crystal AlN lms is about 2.2, the refractive index values typically observed for amorphous lms fall within the range of 1.8 to 1.9, the refractive index of epitaxial lms ranges from 2.1 to 2.2, the refractive index values commonly observed in polycrystalline lms generally lie within the range of 1.9 to 2.1. Hence, the refractive index of AlN lms obtained through reactive magnetron sputtering aligns with the standard range.…”

Section: Resultsmentioning

confidence: 91%

Effects of Different Nitrogen Flow Rates on Structure and Optical Characteristics in AlN Films by Reactive Magnetron Sputtering

Zhu

2023

Preprint

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AlN coatings were deposited on Si (100) substrates by reactive magnetron sputtering with nitrogen-to-argon flow ratios being varied. The main focus of this study was to analyze and provide a theoretical explanation for how the N2 flow ratio affects the crystal structure, surface morphology, and optical properties of films oriented along the C-axis. The findings indicated that AlN films displayed the highest level of stability and premium quality when the N2 flow ratio was set at 40%. X-ray diffraction analysis demonstrated prominent (002) diffraction peaks for AlN films obtained at varying N2 flow levels between 20% and 50%. Furthermore, the examination conducted via scanning electron microscopy demonstrated that higher N2 flow ratios resulted in an improved structural order of the films on the (002) crystal plane, ultimately leading to enhanced preferred orientation. Through the manipulation of the N2 flow ratio, the deposition rate and optical characteristics were effectively improved. These findings have significant implications for improving the crystalline quality of AlN films made through sputtering. Furthermore, this study explores the relationship between the N2 flow ratio and performance parameters of the films, which facilitates their application in optoelectronic and electronic devices.

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Section: Resultsmentioning

confidence: 91%