2003
DOI: 10.1111/j.1151-2916.2003.tb03398.x
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Electrical and Structural Characterization of a Low‐Angle Tilt Grain Boundary in Iron‐Doped Strontium Titanate

Abstract: The atomistic structure and electrical properties of a symmetrical 5.4° [001] tilt grain boundary in Fe‐doped SrTiO3 have been investigated, respectively, by means of various transmission electron microscopy (TEM) techniques and impedance spectroscopy. In weak‐beam dark‐field images, the grain boundary is revealed to consist of a periodic array of dislocations; high‐resolution TEM images show that the dislocation cores are separated by regions of strained lattice. The impedance response of the bicrystal has be… Show more

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Cited by 105 publications
(124 citation statements)
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“…These factors usually lead to remarkable formation of electronic defects, which overlapped the existing ionic conductivity, increase the total conduction even in dominantly ionically conducting or dielectric materials. Effects of interfacial conductivity enhancement in a few orders of magnitude due to electronic contribution were thus observed in nanometric polycrystalline metals oxides such as Y-doped ZrO2, CeO2 [61,73], Fe-doped SrTiO3 [85], NiO, ZnO, Al2O3, MgO [86][87][88][89]. Similar effects are registered also in hetero-interfaces (as in Fig.…”
Section: "Disordered Interfaces"supporting
confidence: 50%
“…These factors usually lead to remarkable formation of electronic defects, which overlapped the existing ionic conductivity, increase the total conduction even in dominantly ionically conducting or dielectric materials. Effects of interfacial conductivity enhancement in a few orders of magnitude due to electronic contribution were thus observed in nanometric polycrystalline metals oxides such as Y-doped ZrO2, CeO2 [61,73], Fe-doped SrTiO3 [85], NiO, ZnO, Al2O3, MgO [86][87][88][89]. Similar effects are registered also in hetero-interfaces (as in Fig.…”
Section: "Disordered Interfaces"supporting
confidence: 50%
“…Using electron energy-loss spectroscopy, for all dislocations an increase of the Ti-to-O ratio was found in the core region suggesting a charged core. For the a<110>{110} edge dislocation the presence of charge was indeed confirmed by impedance spectroscopy measurements on the same bi-crystals [8].…”
Section: Introductionmentioning
confidence: 59%
“…case (iii). 51,52 One the other hand, an example for different majority carriers in the surface layer as a consequence of changed charge state is nominally undoped CeO 2 at comparably low temperatures. 53 Here V…”
Section: Appendix C: Defects' Partial Pressure Dependence: Bulk Versumentioning
confidence: 99%