Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

Aziz, Umar Abdul; Rashid, Nur Nadhirah Mohamad; Aid, Siti Rahmah; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

doi:10.1088/1757-899x/204/1/012003

Cited by 5 publications

(11 citation statements)

References 15 publications

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“…Germanium (Ge) is a promising material for replacing silicon as a substrate for metal oxide semiconductor (MOS) devices. Further downscaling of silicon-based devices will lead to the short channel effect (SCE) that will result in an increase in the leakage current [37][38][39]. This leakage current will increase the power consumption of devices, while also reducing the performance.…”

Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

“…High drive current capability of devices without further downscaling process can be realized by increasing the carrier mobility in the substrate. Ge has emerged as one of the potential candidates to replace Si as a substrate for MOS transistors, due to its higher electrical carrier mobility (3900 cm 2 /V·s for electrons and 1900 cm 2 /V·s for holes) [37]. Furthermore, its similarity with conventional Si will ease the replacement process in manufacturing lines.…”

Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

“…In both cases we derive the Drude model from their experimental data. We also fit data from FTIR measurements we have undertaken on Ge thin films manufactured using ion implantation and rapid laser annealing [37].…”

Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

“…The analysis gives a ω c of 1582 cm −1 (wavelength 6.3 µm) and a carrier concentration of 5.5 × 10 19 cm 3 . (Reference [37] should be referred to for further discussion of the fabrication process).…”

Section: Considering the Extinction Peaks Inmentioning

confidence: 99%

“…Our analysis, based on their reflection measurements, gave a ω c of 1850 cm −1 (wavelength = 5.4 μm). Our group has produced n-Ge films from ion implantation and rapid laser thermal annealing [37]. The thickness of these films is between 40 and 90 nm on a Ge substrate.…”

Section: Considering the Extinction Peaks Inmentioning

confidence: 99%

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Infra-Red Plasmonic Sensors

Centeno

Aid²,

Xie

2018

Chemosensors

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Plasmonic sensors exploiting the localized surface plasmon resonance (LSPR) of noble metal nanoparticles are common in the visual spectrum. However, bio-sensors near the infra-red (NIR) windows (600-900 nm and 1000-1400 nm) are of interest, as in these regions the absorption coefficients of water, melanin deoxyglobin, and hemoglobin are all low. The first part of this paper reviews the work that has been undertaken using gold (Au) and silver (Ag) particles in metal enhanced fluorescence (MEF) in the NIR. Despite this success, there are limitations, as there is only a narrow band in the visual and NIR where losses are low for traditional plasmonic materials. Further, noble metals are not compatible with standard silicon manufacturing processes, making it challenging to produce on-chip integrated plasmonic sensors with Au or Ag. Therefore, it is desirable to use different materials for plasmonic chemical and biological sensing, that are foundry-compatible with silicon (Si) and germanium (Ge). One material that has received significant attention is highly-doped Ge, which starts to exhibit metallic properties at a wavelength as short as 6 µm. This is discussed in the second part of the paper and the results of recent analysis are included.Fluorescent molecules emitting at wavelengths in the infra-red window, in which penetration depth is high and the autofluorescence minimum is of particular interest, are potentially an attractive technology for bio-applications [27]. However, the low quantum yield and poor photostability of near infra-red (NIR) dyes currently limits their applicability. Design and synthesis of NIR dyes with high quantum yield and photostability have proved to be extremely challenging, due to the complex synthetic routes required for these large, complex molecules [27]. The amplification of light from NIR fluorophores by MEF is a promising strategy for dramatically improving both the detection sensitivity and image enhancement, thereby realizing the potential advantages of the NIR fluorophores. Section 2 of this paper discusses the physical process of MEF and reviews some of the published work by the authors.NIR losses arise in Au and Ag from intraband (or Drude) losses. There is, therefore, only a narrow band in the visual and NIR range where losses are low for traditional plasmonic materials. A further challenge associated with noble metals is that they are not compatible with standard silicon manufacturing processes. Further, noble metals diffuse into the semiconductor, forming deep-level traps which have an adverse effect on device performance. While Au and Ag are the obvious choice for visible and NIR applications, there is a desire and need for chemical and biological sensing in the mid-infrared (MIR) range [29][30][31] using materials that are foundry-compatible with silicon (Si) and germanium (Ge), that might lead to on-chip integration of devices governed by plasmonic effects [25,26]. One material that has received significant attention as a potential plasmonic material in the MIR is highly-...

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Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

Section: Ge As a Plasmonic Materials In The Mid Infra-redmentioning

confidence: 99%

Section: Considering the Extinction Peaks Inmentioning

confidence: 99%

Section: Considering the Extinction Peaks Inmentioning

confidence: 99%

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