Electrical and physical characteristics of the high-k Ti-doped Ce<inf>2</inf>O<inf>3</inf> (Ce<inf>2</inf>Ti<inf>2</inf>O<inf>7</inf>) dielectrics combined with rapid thermal annealing

Abstract

In this paper, electrical and physical characteristics of the addition of Ti into Ce 2 O 3 dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce 2 Ti 2 O 7 gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.