Electrical and photoelectric properties of transparent Li-doped ZnO/ZnO homojunctions by pulsed laser deposition

Yu, Shihui; Ding, Linghong; Zheng, Haiwu; Xue, Chuang; Chen, Li; Zhang, Weifeng

doi:10.1016/j.tsf.2013.05.125

Cited by 25 publications

(6 citation statements)

References 24 publications

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“…Using dopants including Al, Ti, N, Li, Mg, Sn, Co and Mn to improve the performance of UV detectors have been widely discussed. [11][12][13][14][15] In this paper, we chose Mn as the dopant in the ZnO lms because of existence room temperature ferromagnetism in Mn-doped ZnO lms and changing energy band gap. 16 Furthermore, Ruan et al has proved that behavior of doping Mn could increase the lm resistivity, which contributes to decrease the dark current and improves the photosensitivity of UV detectors.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

Zhu

Yang

2019

RSC Adv.

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Mn-doped ZnO (MZO) films were prepared on glass substrates using sol-gel dip-coating technology. The microstructural, morphological, optical and photoelectric properties of MZO films were investigated at different withdrawal speeds (WS: 20, 40, 60 and 80 mm s À1 ). The X-ray diffraction (XRD) patterns showed that all the films obtained were polycrystalline with a hexagonal structure, and the highest crystallinity of MZO films was observed as films were deposited at 40 mm s À1 . The UV-Vis spectra revealed that the average optical transmittance of all samples was over 60% and the energy band gap of films decreased from 3.616 to 3.254 eV with the increase in withdrawal speed. The formed Au/MZO/Au photodetectors (PDs) indicate that a device prepared at 40 mm s À1 shows superior properties both in response speed and detection capability, and the rise time is 1.871 s and fall time is 3.309 s at 365 nm for 3 V bias and the detectivity (D*) reaches $1.7 Â 10 10 Jones. Moreover, the responsivity of PDs is also affected by the distance between Au electrodes and external bias. This research provides a simple way to fabricate the UV PDs based on MZO films with faster response and higher detectivity. Experimental details Sols preparation and deposition of Mn-doped ZnO lmsPreparation process of Mn-doped ZnO (MZO) lms is that zinc acetate dehydrate [(Zn(CH 3 CO 2 ) 2 $2H 2 O), purity 99.5%]

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Section: Introductionmentioning

confidence: 99%

Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

Zhu

Yang

2019

RSC Adv.

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“…One of the most common TCOs is indium tin oxide (ITO), which offers commercially acceptable performance in terms of high conductivity and transparency 10 . A TCO needs to be cost effective, reliable and stable in order for it to be used as anode material in solar cells, et al 11 12 13 However, ITO thin films are expensive due to the high cost of indium. In addition, they are less stable in hydrogen plasma and are toxic 14 .…”

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confidence: 99%

Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit

Lyu

et al. 2016

Sci Rep

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In order to improve the conductivity of the single–layered nano-thick F doped SnO2 (FTO) thin films, an Ag mid–layer is embedded between the FTO layers. In our work, the effects of mid–layer Ag and top FTO layer on the structural, electrical and optical properties of FTO/Ag/FTO multilayered composite structures deposited on quartz glass substrates by magnetron sputtering at 100 °C have been investigated. As the thickness of Ag mid–layer increases, the resistivity decreases. As the top FTO layer thickness increases, the resistivity increases. The highest value of figure of merit φTC is 7.8 × 10−2 Ω−1 for the FTO (20 nm)/Ag (7 nm)/FTO (30 nm) multilayers, while the average optical transmittance is 95.5% in the visible range of wavelengths and the resistivity is 8.8 × 10−5 Ω·cm. In addition, we also describe the influence of Ag and top FTO layer thickness on structural, electrical and optical properties of the nano-thick FTO (20 nm)/Ag/FTO multilayers and the mechanism of the changes of electrical and optical properties at different Ag and top FTO layer thicknesses.

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“…This alteration may be appeared due to the intrinsic nature of ZnO which has E g value from 3.2 -3.3 eV [15]. In addition to that, for ZnO/AZO film, the decrement of Eg may be caused by the scattering effect at the interface between the oxide homojunction [16].…”

Section: Results and Analysismentioning

confidence: 99%

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

Ismail¹,

Mamat²,

Malek³

et al. 2018

IJEECS

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<p>Intrinsic zinc oxide (ZnO)/Al-doped ZnO (AZO) homojunction film was prepared using two-step immersion processes. The film was characterized using field emission scanning electron microscopy, X-ray diffraction (XRD), Raman spectroscopy, and ultraviolet–visible spectrophotometer to investigate their structural and optical properties. The surface morphology image displays that the ZnO deposited on the nanorod surfaces in layer form with average diameter of nanorods about 95 nm. The structural properties of XRD pattern demonstrate that the film possessed good crystallinity with the preferred orientation at (002) plane. The film also possessed excellent absorption in the ultraviolet (UV) region with optical band gap energy of 3.22 eV. These results indicate that the film has a good potential for optical-based device such a UV sensor.</p>

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Electrical and photoelectric properties of transparent Li-doped ZnO/ZnO homojunctions by pulsed laser deposition

Cited by 25 publications

References 24 publications

Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors

Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit

Intrinsic ZnO/Al-doped ZnO Homojunction: Structural and Optical Properties

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