Electrical and photoconducting properties of CdS (Cu, Cl) thin films

Porada, Z.; Schabowska, E.

doi:10.1016/0042-207x(83)90009-x

Cited by 8 publications

(3 citation statements)

References 8 publications

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“…The In 2 O 3 (Sn) layer was made by reactive ionic sputtering in a diode circuit in an oxygen atmosphere, and on this layer the photoconducting CdS layer [6] was then evaporated under vacuum. Next the CdS layer was recrystallized by its annealing in CdS powder with Cu 2þ and Cl À ions.…”

Section: Investigation Resultsmentioning

confidence: 99%

Optoelectronic Logical Gates “AND”, “OR” and “NOT”

Porada¹,

Schabowska-Osiowska²

2003

Active and Passive Electronic Components

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Optoelectronic AND, OR and NOT logical gates were composed of thin film photoconducting and electroluminescent elements, made of cadmium sulphide and zinc sulphide, respectively, doped with copper, chlorine and manganese. The gates consisted of several photoconducting elements and one electroluminescent element suitably connected and supplied with a sinusoidal voltage. In such circuits the functions of product, sum and negation for input light signals illuminating the photoconducting elements were realized, and the output signal was the light emitted by the electroluminescent element.

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Section: Investigation Resultsmentioning

confidence: 99%

Optoelectronic Logical Gates “AND”, “OR” and “NOT”

Porada¹,

Schabowska-Osiowska²

2003

Active and Passive Electronic Components

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“…a -immediately after formation, b -after 1000 hours.. (8) As can be seen, for the film examined immediately after formation the dependence of the photoconductance on the illuminance is linear over the whole range investigated (0 -200 lx). In contrast , for the film aged for 1000 hours this dependence is linear only to about 30…”

Section: -'mentioning

confidence: 89%

“…The 1n203(Sn) layer was made by reactive cathode sputtering of a 90 % In -10 % Sn alloy in a diode circuit in oxygen atmosphere, and on this layer the photoconductive CdS layer was then evaporated undcr vacuuim. Next the CdS layer was recrystallized by its annea*ling in CdS powder with Cu2+ and Cl-ions[8]. The second electrode of the PC element was an indium layer evaporated under vacuum on a photoconductive CdS(Cu,CI) layer.…”

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confidence: 99%

The effect of aging process on the parameters of a thin film optoelectronic NAND logical gate

Porada

Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics

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An optoelectronic logical gate NAND composed of thin film photoconductive (PC) and electroluminescent (EL) elements. In the system was supplied with sinusoidal voltage with equal values of amplitude and frequency. The input signals were two rectangular light pulses, illuminating the respective photoconductive elements, and the output signal was the luminance of the electroluminescent cell. The process of natural aging, which caused changes in parameters of PC elements, influenced also the changes in characteristics of the system composed of these elements. For EL element subjected to aging in normal conditions without applied voltage, the luminance of the light was lower by about 20% than for element immediately after their preparation. A variation of the parameters of PC and EL elements by the aging process caused then a decrease of the signal on the output of NAND gate and also an increase in the lag of the output signal in relation to the input signal.

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Development of Dashboard information Display System for Automotive Vehicles

Nwagboso

1993

Automotive Sensory Systems

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Electrical and photoconducting properties of CdS (Cu, Cl) thin films

Cited by 8 publications

References 8 publications

Optoelectronic Logical Gates “AND”, “OR” and “NOT”

Optoelectronic Logical Gates “AND”, “OR” and “NOT”

The effect of aging process on the parameters of a thin film optoelectronic NAND logical gate

Development of Dashboard information Display System for Automotive Vehicles

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