Electrical and optical properties of black phosphorus single crystals

Narita, Shin‐ichiro; Akahama, Yuichi; Tsukiyama, Y.; Muro, K.; Mori, Shigeru; Endo, S.; Takeuchi, Masaki; Seki, M.; Suga, S.; Mikuni, Akira; Kanzaki, Hiroshi

doi:10.1016/0378-4363(83)90547-8

Cited by 93 publications

(77 citation statements)

References 4 publications

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“…In its bulk form, black phosphorus is a direct-gap semiconductor with a 0.33 eV bandgap and mobilities of up to 20000 cm 2 /V·s at room temperature [16][17][18]. Unlike other allotropes, black phosphorus is characterized by a layered structure: the in-plane bonds are strong and the van der Waals interlayer interaction is weak [19].…”

Section: Sample Fabricationmentioning

confidence: 99%

Isolation and characterization of few-layer black phosphorus

et al. 2014

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: a.castellanosgomez@tudelft.nl ABSTRACT Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus.

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Section: Sample Fabricationmentioning

confidence: 99%

Isolation and characterization of few-layer black phosphorus

et al. 2014

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“…16 Even for these thick films, due to fringing effects, the measured ratio of σ x /σ y was only qualitatively found to be anisotropic by about 50%. The resistivity in the bulk samples have however been studied quite early on 12,26,27 and the measured conductivity ratio in the planar direction is (σ x /σ y ) exp = 2.46. 28 Using the kinetic transport theory, the conductivity may be connected to the effective masses and the relaxation times.…”

Section: Tight-binding Modelmentioning

confidence: 99%

Electronic structure and anisotropic Rashba spin-orbit coupling in monolayer black phosphorus

2015

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We investigate the electronic structure of the monolayer black phosphorus (BP) using density functional methods both with and without an applied electric field. We find that a simple one-band tight-binding Hamiltonian based on the pz orbitals and nearest-neighbor hopping is sufficient to describe the band structure in the gap region rather well and justification for this is given from symmetry arguments. The anisotropic nature of the band structure leads in turn to an anisotropic Rashba effect, where the magnitude of the spin splitting caused by an applied electric field is not only momentum dependent, but also depends on the direction of k. The Rashba Hamiltonian is generalized for the anisotropic case, which reads: HR = αR( σ × k ′ ) ·ẑ, where the scaled momentum k ′ contains the anisotropy effect. The Rashba effect is studied quantitatively for BP from ab initio density-functional calculations in the presence of an applied electric field. A by-product of this work is the demonstration that the strength of the spin-orbit coupling for the outermost electrons in the atoms, which are relevant for the solids, increases only as the Landau-Lifshitz Z 2 scaling with the atomic number Z, rather than the higher power Z 4 scaling, as sometimes thought.

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“…Among the most promising of these 2D materials is an allotrope of phosphorus, known as black phosphorus (BP) [5][6][7][8][9][10][11], which is that element's most stable crystal at room temperature and pressure. In bulk, BP is a narrow-gap semiconductor with a orthorhombic structure that consists of atoms covalently bound into layers coupled by van der Waals interactions [12][13][14][15]. Similar to graphene, BP can be mechanically exfoliated to obtain samples with a few or single layers, with the latter being known as phosphorene.…”

Section: Introductionmentioning

confidence: 99%

Landau levels of single-layer and bilayer phosphorene

2015

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In this work we introduce a low-energy Hamiltonian for single-layer and bilayer black phosphorus that describes the electronic states at the vicinity of the point. The model is based on a recently proposed tight-binding description for electron and hole bands close to the Fermi level. We calculate expressions for the Landau-level spectrum as function of magnetic field, and in the case of bilayer black phosphorus we investigate the effect of an external bias on the electronic band gap. The results showcase the highly anisotropic character of black phosphorus, and in particular for bilayer BP, the presence of bias allows for a field-induced semiconductor-metal transition.

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Electrical and optical properties of black phosphorus single crystals

Cited by 93 publications

References 4 publications

Isolation and characterization of few-layer black phosphorus

Isolation and characterization of few-layer black phosphorus

Electronic structure and anisotropic Rashba spin-orbit coupling in monolayer black phosphorus

Landau levels of single-layer and bilayer phosphorene

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