Electrical and Optical Properties of ZnO:Al/p-Si Heterojunction Diodes
M.A. Bouacheria,
A. Djelloul,
L. Benharrat
et al.
Abstract:The study examines the optical and electrical characteristics of n-ZnO:Al (AZO) thin films that were deposited on p-Si using the sol-gel dip-coating process, with thicknesses ranging from three to six cycles. The I-V characteristics of the diode device exhibited a high and low current under forward and reverse bias, respectively. The ideality factors were found to decrease from 2.78 to 2.13 with an increase in the number of layers from 3C to 6C. However, it was revealed that the barrier height increased from 0… Show more
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