Electrical and optical properties of InSe with various interfaces

Abstract

In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron–phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p–n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.

Interface‐Dependent Electronic Structure and Optical Properties of Staggered Al2STe/Ga2STe van der Waals Heterostructures

“…[28,29] InSe has the characteristics of low electron effective mass and direct bandgap transition, and has potential application prospects in 2D photodetector, field-effect transistors, and thermoelectric generators. [30][31][32] However, due to their indirect bandgap characteristics, most of them have relatively poor photocatalytic efficiency, which seriously limits their practical application. An effective way to obtain better physical and chemical thermal properties is to change the symmetry of 2D materials.…”