Electrical and optical properties of bias sputtered ZnO thin films

Caporaletti, O.

doi:10.1016/0165-1633(82)90097-1

Cited by 53 publications

(9 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The optical band gap evaluated from the transmittance data increased from 3.23 to 3.39 eV with the increase in substrate temperature from 548 to 723 K. The widening of the band gap is related to the increase in carrier concentration. Similar results were reported earlier for nonstoichiometric ZnO films [26,27].…”

Section: Electrical Resistivitysupporting

confidence: 92%

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

et al. 2002

View full text Add to dashboard Cite

Thin films of zinc oxide (ZnO) were prepared by dc reactive magnetron sputtering on glass substrates at various oxygen partial pressures in the range 1 Â 10 À4 -6 Â 10 À3 mbar and substrate temperatures in the range 548-723 K. The variation of cathode potential of zinc target on the oxygen partial pressure was explained in terms of target poisoning effects. The stoichiometry of the films has improved with the increase in the oxygen partial pressure. The films were polycrystalline with wurtzite structure. The films formed at higher substrate temperatures were (0 0 2) oriented. The temperature dependence of Hall mobility of the films formed at various substrate temperatures indicated that the grain boundary scattering of charge carriers was predominant electrical conduction mechanism in these films. The optical band gap of the films increased with the increase of substrate temperature. The ZnO films formed under optimized oxygen partial pressure of 1 Â 10 À3 mbar and substrate temperature of 663 K exhibited low electrical resistivity of 6:9 Â 10 À2 X cm, high visible optical transmittance of 83%, optical band gap of 3.28 eV and a figure of merit of 78 X À1 cm À1 . Ó

show abstract

Section: Electrical Resistivitysupporting

confidence: 92%

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

et al. 2002

View full text Add to dashboard Cite

show abstract

“…On the other hand, the ion saturation current does not show a pressure dependence since the distance, these ions have to cross (the plasma sheath in front of the substrate) is much smaller and thus collision free in the pressure range below about 5 Pa. Aside from the higher ion saturation current density, the rf discharge is also characterized by 36 Ar + ions on a substrate at floating potential in dependence of the P dc /(P dc + P rf ) ratio, given in numbers (in per cent) at different peaks [16].…”

Section: Species On a Substrate During Film Growthmentioning

confidence: 99%

Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties

Ellmer

2000

J. Phys. D: Appl. Phys.

554

268

View full text Add to dashboard Cite

Magnetron sputtering of transparent conductive oxides (zinc oxide, indium tin oxide, tin oxide) is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying magnetron sputtering are reviewed in this paper. The growth process during magnetron sputtering is characterized by the bombardment of the growing film with species from the sputtering target and from the plasma. In addition to sputtered atoms with energies in the eV range, ions from the plasma (mostly argon) and neutral atoms (also argon) reflected at the target hit the growing film. Depending on the energy of these species and on the ion-to-neutral ratio the properties of the films vary. High energies ( 100 eV), which occur mainly at low sputtering pressures lead to damage of the growing film, connected with mechanical stress, small crystallites and bad electrical parameters. Ion assisted growth with low ion energies (below about 50 eV) is advantageous as is a high ion-to-neutral ratio. A compilation of resistivities of magnetron sputtered zinc oxide films yields a limiting resistivity of 2 × 10 −4 cm for polycrystalline films. Based on the correlation between plasma parameters and film properties new research fields are anticipated.

show abstract

“…Band gap widening has been reported for nonstoichiometric ZnO (Refs. [44] and [45]) and IZO thin films [46] [47]. The band gap widening is usually interpreted in terms of Burstein-Moss (BM) shift [48] resulting from the filling up of lower levels in the conduction band.…”

Section: Optical Propertiesmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

View full text Add to dashboard Cite

Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

show abstract

Electrical and optical properties of bias sputtered ZnO thin films

Cited by 53 publications

References 10 publications

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Contact Info

Product

Resources

About