Electrical and optical properties of dip coated Al-doped ZnO thin films : Effect of Al-concentration, starting solution and sample ageing

Yadav, Ram Phul; Bahadur, K. C. Lila; Shrestha, Shankar Prasad

doi:10.5564/mjc.v22i48.1743

Cited by 2 publications

(8 citation statements)

References 22 publications

(32 reference statements)

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“…To perform electrical characterization, the relation provided below is utilized to determine sheet resistance [1].…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…For study of effect of number of coatings on carrier concentration, we have used the relation given below which determined the carrier concentration [1] values of samples deposited with varying number of coatings.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Where R H is Hall coefficient, e is charge of electron. As the Hall coefficient (R H ) was determined through the following expression [1]. In addition to that we have measured the value of Hall mobility (µ) of the charge carriers with known electrical resistivity and Hall coefficient with different number of coatings by using the relation,…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…Zinc Oxide (ZnO) thin film is one of the pioneering materials lying into II-VI group compound semiconductor [1,2]. It is an oxide semiconductor with a wide and a direct energy gap of around 3.37 eV.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, the sol-gel approaches use three methods and they are dip-coating, spin-coating and spray coating. Recently, Yadav et al, [1], have extensively studied the effect of solution age, sample age and aluminum concentration on the optical and electrical properties of ZnO:Al films. However, they have not reported the effect of sample age on sheet resistance for pure ZnO thin films deposited with different number of coatings of solution age 10 days.…”

Section: Introductionmentioning

confidence: 99%

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Tailoring of ZnO thin films: effect of number of coating and sample ageing

Rai

2023

ijmph

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In this work, the effect of number of coating and sample ageing on the properties of ZnO thin films prepared by dip coating technique using 0.1 M aqueous solution of zinc acetate and methanol on the glass substrate was experimentally investigated. The linear four probe configuration has been used to measure sheet resistance of the deposited samples whereas laboratory purpose Hall-effect measurement apparatus has been used to measure carrier concentration and Hall mobility. The dark sheet resistance (180.37 kΩ/□ to 41.69 kΩ/□) and normal sheet resistance (163.15 kΩ/□ to 31.72 kΩ/□) of ZnO thin films decreases significantly as the sample age increased from 79 to 167 days, particularly for films deposited with 8, 12, 16, and 20 coats. It is also found that as the number of coating increases, thickness of the thin films (from 199.7 nm to 211.5 nm) and carrier concentration increases whereas the Hall mobility decrease. The spectrophotometer (USB2000, photonics) has been used to investigate optical properties of deposited films. All the ZnO thin films demonstrate remarkable transparency, exhibiting transmittance lies between 61% and 85% across the wavelength range of 450 nm to 950 nm. The optical transmittance is observed to decrease with increase in number of coatings in the wavelength range 650 to 950 nm. The optical band gap value increases slightly from 3.22 eV to 3.25 eV for corresponding number of coatings from 8 to 20. This slight change in optical band gap indicates that it does not depend significantly on number of coating and thickness of the films.

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“…To perform electrical characterization, the relation provided below is utilized to determine sheet resistance [1].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tailoring of ZnO thin films: effect of number of coating and sample ageing

Rai

2023

ijmph

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Optical and Electrical Properties of Homo and Heterojunction Formed by the ZnO/FTO and CuO/ZnO/FTO Nanostructures

Ghimire,

Pokhrel,

Gupta

et al. 2023

J. Nep. Phys. Soc.

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The most common materials used to create electrical and optoelectronic devices for a variety of applications including transistor, sensor and detector are semiconductor nanostructures. Combining the nanostructures can result semiconductor homostructure and heterostructure. The homojunction of ZnO/FTO and heterojunction of CuO/ZnO/FTO coated glass substrate are formed using spray pyrolysis technique. The optical band gap for the FTO, ZnO, ZnO/FTO and CuO/ZnO/FTO films calculated using data from UV-visible spectroscopy are 3.629 eV, 3.236 eV, 3.113 eV and 1.456 eV respectively. The observed ohmic behavior of ZnO/FTO homojunction is due to the close band gap of FTO (i.e. Eg = 3.629 eV) and ZnO (Eg = 3.236 eV) whereas the non-ohmic behavior of CuO/ZnO/FTO heterojunction is due to the significant different in band gap energy of CuO (i.e. Eg = 1.456 eV) and ZnO (Eg = 3.236 eV). The photocurrent for ZnO/FTO homojunction increases from 232 μA to 350 μA for visible light illumination and from 232 μA to 400 μA for UV light illumination at bias voltage of 2.5 V. There is no significantly changed in the threshold voltage in visible region. For the CuO/ZnO/FTO heterojunction, the photocurrent increases from 280 μA to 390 μA for visible illumination and from 280 μA to 480 μA for UV illumination at 2.5 V. The enhancement of channel current in both sample (i.e. homojunction and heterojunction) under visible illumination is due to detrapping the charge carriers from mid gap states and released to the conduction band. The large enhancement of photocurrent under UV illumination is due to band gap absorption. Threshold voltage for CuO/ZnO/FTO non-ohmic device is shifted negatively from 1 V to 0 V with increasing the frequency of incident radiation. It suggests that the heterojunction formed by CuO/ZnO/FTO structure is applicable for broad band photo detector.

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Electrical and optical properties of dip coated Al-doped ZnO thin films : Effect of Al-concentration, starting solution and sample ageing

Cited by 2 publications

References 22 publications

Tailoring of ZnO thin films: effect of number of coating and sample ageing

Tailoring of ZnO thin films: effect of number of coating and sample ageing

Optical and Electrical Properties of Homo and Heterojunction Formed by the ZnO/FTO and CuO/ZnO/FTO Nanostructures

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