Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles

Ederth, J.; Johnsson, P.; Niklasson, Gunnar A.; Hoel, Anders; Hultåker, A.; Heszler, Péter; Granqvist, Claes‐Göran; Doorn, Arie R. van; Jongerius, M. J.; Burgard, Detlef

doi:10.1103/physrevb.68.155410

Cited by 185 publications

(115 citation statements)

References 19 publications

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“…§ In addition to films and nanowires, nanoscale ITO particles can be made metallic. Ederth et al [105] studied the temperature behavior of porous thin films comprising of ITO nanoparticles. Their films were produced by spin coating a dispersion of ITO nanoparticles (mean grain size ≈ 16 nm) onto glass substrates, followed by post thermal treatment.…”

Section: Temperature Behavior Of Electrical Resistivitymentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Section: Temperature Behavior Of Electrical Resistivitymentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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“…The literature on the subject is quite extensive. [60][61][62][63][64][65][66][67] Specifically, the parametrization of the dielectric permittivity of ITO was suggested 67 using the Tauc-Lorentz model 68 and the Drude model. This parametrization was used 23,24 for the comparison between the experimental data and computational results in the framework of the Lifshitz theory.…”

Section: A Complex Indices Of Refraction and Dielectric Permittivitimentioning

confidence: 99%

Modifying the Casimir force between indium tin oxide film and Au sphere

et al. 2012

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We present complete results of the experiment on measuring the Casimir force between an Aucoated sphere and an untreated or, alternatively, UV-treated indium tin oxide film deposited on a quartz substrate. Measurements were performed using an atomic force microscope in a high vacuum chamber. The measurement system was calibrated electrostatically. Special analysis of the systematic deviations is performed, and respective corrections in the calibration parameters are introduced. The corrected parameters are free from anomalies discussed in the literature. The experimental data for the Casimir force from two measurement sets for both untreated and UVtreated samples are presented. The random, systematic and total experimental errors are determined at a 95% confidence level. It is demonstrated that the UV treatment of an ITO plate results in a significant decrease in the magnitude of the Casimir force (from 21% to 35% depending on separation). However, ellipsometry measurements of the imaginary parts of dielectric permittivities of the untreated and UV-treated samples did not reveal any significant differences. The experimental data are compared with computations in the framework of the Lifshitz theory. It is found that the data for the untreated sample are in a very good agreement with theoretical results taking into account the free charge carriers in an ITO film. For the UV-treated sample the data exclude the theoretical results obtained with account of free charge carriers. These data are in a very good agreement with computations disregarding the contribution of free carriers in the dielectric permittivity. According to the hypothetical explanation provided, this is caused by the phase transition of the ITO film from metallic to dielectric state caused by the UV-treatment. Possible applications of the discovered phenomenon in nanotechnology are discussed.

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“…The temperature coefficient of resistance (TCR) is estimated from the measured data according to the formula reported elsewhere [13]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Although, there are some works in Co doped TiO 2 , there are few works on the electrical properties of Co/TiO 2 multilayer thin films. The conduction mechanism is quite complex in the metal doped oxide materials [13]. In this paper, we would like to investigate how annealing plays a role in the electrical properties of Co/TiO 2 multilayer thin films.…”

Section: Introductionmentioning

confidence: 99%