Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering

Studenyak, I.P.

doi:10.15407/spqeo19.01.079

Cited by 3 publications

(4 citation statements)

References 14 publications

(15 reference statements)

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“…In Ref. [8], it was shown that the optical absorption edge for non-irradiated Cu 6 PS 5 Ibased thin films in the region of its exponential behaviour is described by the Urbach rule [10] ( )…”

Section: Methodsmentioning

confidence: 99%

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Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Studenyak¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Cu 6 PS 5 I-based thin films were deposited using non-reactive radio-frequency magnetron sputtering. Structural studies of thin films were performed by scanning electron microscopy, their chemical composition were determined using energydispersive X-ray spectroscopy. As-deposited thin films were irradiated with wideband radiation of Cu-anode X-ray tube at different exposition times. Optical transmission spectra of X-ray irradiated Cu 5.56 P 1.66 S 4.93 I 0.85 thin films were measured depending on irradiation time. The Urbach absorption edge and dispersion of refractive index for X-ray irradiated Cu 5.56 P 1.66 S 4.93 I 0.85 thin films were studied. It has been revealed the nonlinear decrease of energy pseudogap and nonlinear increase of refractive index with increase of X-ray irradiation time.

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Section: Methodsmentioning

confidence: 99%

“…Electrical studies have shown that the total electric conductivity of the Cu 6 PS 5 I-based thin films increases with increase of Cu atoms content [8]. Thus, with the Cu content increase in the interval from Cu 5.37 P 1.88 S 5.04 I 0.71 to Cu 7.55 P 0.89 S 3.44 I 1.12 , the electric conductivity increases from 0.044 to 0.066 S/m.…”

Section: Introductionmentioning

confidence: 99%

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Studenyak¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Cu content increase caused rapid decrease of the films hardness to around 0.7 GPa. At the same time, the conductivity of these films increased [24,25]. It is well known that high ionic conductivity of the investigated thin films is caused by formation of conductive channels from dendrites and crystal clusters by spinodal decomposition when the copper content increases [26].…”

Section: Nanoindentation In Thin Filmsmentioning

confidence: 73%

Mechanical properties of Cu6PS5І superionic crystals and thin films

Bilanych¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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The hardness and Young's modulus dependences on the instrumented indentation depth profiles in Cu 6 PS 5 I single crystals and Cu 6 PS 5 I-based thin films were investigated. The measurements of mechanical parameters were performed at the room temperature by instrumented indentation in the continuous stiffness measurement mode with harmonic modulation of load during its linear increase. The variations of the hardness and Young's modulus in Cu 6 PS 5 І single crystals were interpreted in the framework of deformation gradient model. The decrease of micro-hardness in Cu 6 PS 5 I-based thin film observed with copper content increase was explained by formation of conductive clusters and dendrites.

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“…Electrical and optical studies of Cu 6 PS 5 I-based thin films with a different copper atoms content were performed in Ref. [9].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical studies of Cu6PSe5I-based thin film deposited by magnetron sputtering

Studenyak¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Cu 5.5 P 1.2 Se 5.0 I 1.3 thin film was deposited onto silicate glass substrate by nonreactive radio frequency magnetron sputtering. Structural studies were carried out using X-ray diffraction and SEM techniques. Spectrometric studies of transmission spectra of Cu 5.5 P 1.2 Se 5.0 I 1.3 thin film in the temperature interval 77 to 300 K were investigated. It is shown that the temperature behaviour of optical absorption edge is described by the Urbach rule. Temperature dependences of optical parameters of the Urbach absorption edge and refractive index have been analyzed. The influence of temperature and structural disordering on the Urbach tail has been studied. The comparison of optical parameters of Cu 6 PSe 5 I crystal and Cu 5.5 P 1.2 Se 5.0 I 1.3 thin film has been performed.

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Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering

Cited by 3 publications

References 14 publications

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Mechanical properties of Cu6PS5І superionic crystals and thin films

Structural and optical studies of Cu6PSe5I-based thin film deposited by magnetron sputtering

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