Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors

Li, Xiaohan; Huang, Biaohong; Hu, Weijin; Zhang, Zhidong

doi:10.1016/j.jmst.2019.05.040

Cited by 10 publications

(3 citation statements)

References 32 publications

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“…e ultraviolet light reacts with the dye or stimulates the dye. Air, water vapor, and pigments become colorless or light-colored compounds, causing macrofading of oil painting [9,10]. Some researchers have tested the discoloration resistance of five kinds of pigments in oil paintings, indicating that the initial color change of oil paintings may be caused by the fading of ultraviolet-sensitive pigments, and the color change is long term [11,12].…”

Section: Introductionmentioning

confidence: 99%

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Liu

2022

Mobile Information Systems

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Due to the excellent electrical properties, stable temperature characteristics, and abundant material systems of ferroelectric thin film materials, in recent years, ferroelectric devices based on silicon technology have been used in microelectronic mechanical systems, new energy photovoltaics, especially nonvolatile memory and other fields. During the preservation of the artist’s oil painting works, the temperature change will directly cause the physical effects of thermal expansion and contraction of the oil painting and the chemical reaction speed of the material in nature. Therefore, it is of great significance to introduce the technology of nano-PZT ferroelectric thin film into oil paintings to prevent fading. This article aims to study the research on preventing fading of the artist’s oil paintings based on nano-PZT ferroelectric thin films and analyze the characteristics of ferroelectric materials, the application of ferroelectric films, the preparation methods of ferroelectric films, and the basis of the main environmental factors that affect the fading of oil paintings. In the above, we studied the fading process of different concentrations of oil paints under simulated sunlight aging and the effect of different concentrations and thicknesses of PZT ferroelectric thin films coated with nano-TiO2 coatings on the color stability of oil paints. The experimental results show that after five times of simulated solar aging for the four concentrations, the total color difference △E: 0.05% group is the largest, 0.4% group is the smallest, the higher the oil paint concentration, the smaller the color difference, the better the color stability, and the antisimulation of sunlight fading.

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Section: Introductionmentioning

confidence: 99%

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Liu

2022

Mobile Information Systems

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“…There is no need to undergo harsh electric and magnetic field treatments, and the high-crystallinity fully anti-ferroelectric phases can be obtained directly from the solution by annealing at low temperature [8]. In the past few years, P(VDF-TrFE) has been applied in various memories, including ferroelectric resistive memory [4,9,10], ferroelectric capacitors [11,12], ferroelectric tunnelling junction (FTJs) [13][14][15][16][17], ferroelectric diodes [18][19][20][21][22][23][24], ferroelectric field effect transistors (FeFET) [25][26][27][28][29]. In FTJs, ferroelectric film is only a few nanometres so that electrons can pass through the ferroelectric through the quantum tunnelling effect.…”

Section: Introductionmentioning

confidence: 99%

Resistance switching and conduction mechanism on ferroelectric copolymer thin film device

Qin

Xiao

Qin

et al. 2021

Micro & Nano Letters

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The memristor of sandwich structure is prepared by employing the ferroelectric copolymer poly (vinylidene fluoride/trifluoroethylene) (P(VDF-TrFE)). The device exhibits great bipolar resistance switching characteristics. The low on-off voltage (3/−2.7 V) and high I on /I off ratio (≈10 3 ) as well as fast switching speed are obtained in this device. Based on the intrinsic spontaneous polarization characteristics of ferroelectric materials, the conduction mechanism model of ferroelectric film conductive channel is established and the linear relationship between conductivity and average polarization intensity is given. The calculated results of conductance-voltage (G-V) curve show an obvious hysteresis phenomenon and the distinguishable high/low conductivity states. This physical model is consistent with the experimental results, indicating a reasonable conduction mechanism of the device.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…Today’s world is increasingly shaped by information technology and the need for advanced materials with enhanced properties and performance is ubiquitous in the current scenario [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. The technical advancements in the recent years have paved way for miniaturization of electronic, magnetic, and optoelectronic devices with high performance, which is fundamentally dependent on the physical, chemical, and electromagnetic properties of their respective electronic, optical, magnetic, and electromagnetic components [ 1 , 2 , 3 , 4 ]. As such, the scientific research and development community challenged globally to investigate and improve the material properties for industrial or device applications that calls upon the persistent research and analysis of fundamental properties of materials [ 5 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films

et al. 2020

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Niobium (Nb) thin films, which are potentially useful for integration into electronics and optoelectronics, were made by radio-frequency magnetron sputtering by varying the substrate temperature. The deposition temperature (Ts) effect was systematically studied using a wide range, 25–700 °C, using Si(100) substrates for Nb deposition. The direct correlation between deposition temperature (Ts) and electrical properties, surface/interface microstructure, crystal structure, and morphology of Nb films is reported. The Nb films deposited at higher temperature exhibit a higher degree of crystallinity and electrical conductivity. The Nb films’ crystallite size varied from 5 to 9 (±1) nm and tensile strain occurs in Nb films as Ts increases. The surface/interface morphology of the deposited Nb films indicate the grain growth and dense, vertical columnar structure at elevated Ts. The surface roughness derived from measurements taken using atomic force microscopy reveal that all the Nb films are characteristically smooth with an average roughness <2 nm. The lowest electrical resistivity obtained was 48 µΩ cm. The correlations found here between growth conditions electrical properties as well as crystal structure, surface/interface morphology, and microstructure, could provide useful information for optimum conditions to produce Nb thin films for utilization in electronics and optoelectronics.

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Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors

Cited by 10 publications

References 32 publications

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Resistance switching and conduction mechanism on ferroelectric copolymer thin film device

Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films

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