Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Ho, Wen‐Jeng; Lin, Jen-Lien; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

doi:10.3390/ma10070700

Cited by 12 publications

(10 citation statements)

References 28 publications

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“…Electrical and optical characterization of the sputtered AZO films was carried out. The total thickness of all the films was kept around 75 nm that provides a good antireflection property [40,41].…”

Section: Resultsmentioning

confidence: 99%

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

et al. 2020

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As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transparency and low sheet resistance, suitable for many optoelectronic applications. Furthermore, we implemented such ultra-thin metallic films in Dielectric/Metal/Dielectric (DMD) structures based on Aluminum-doped Zinc Oxide (AZO) as the dielectric with an ultra-thin silver aluminum (Ag:Al) metallic interlayer. The multilayer structures were deposited by magnetron sputtering, which offers an industrial advantage and superior reliability over thermally evaporated DMDs. Finally, we tested the optimized DMD structures as a front contact for n-type silicon solar cells by introducing a hole-selective vanadium pentoxide (V2O5) dielectric layer.

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Section: Resultsmentioning

confidence: 99%

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

et al. 2020

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“…The J SC -EQE values are almost the same as J sc values. Overall, the ITO/SiO 2 layers outperformed the ITO layer in terms of enhanced optical and electrical performances (optical reflectance, EQE, and the dark I-V and photovoltaic J-V results) [32]. Thus, a layer configuration of ITO/SiO 2 was applied to the GaAs solar cells tested in all subsequent experiments.…”

Section: Resultsmentioning

confidence: 99%

“…The spectral conversion layer of UC cells is generally located on the bottom side of solar cells, as it is meant to modify photons that are not absorbed by the solar cell by shifting IR (infrared) and NIR (near infrared) parts of the spectrum to the visible part. Extensive research has been done to study spectral conversion on silicon-based solar cells, which has involved applying a DC-layer, or LDS-layer, to the front side of silicon-based solar cells, however, few researchers have applied a UC-layer to the front side of GaAs single-junction solar cells [31,32,33,34,35,36]. Furthermore, few researchers have simultaneously applied LDS-phosphors and UC-phosphors on the front side to enhance the conversion efficiency of GaAs single-junction solar cells.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors

Liu

Lin

et al. 2019

Nanomaterials

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In this study, we examined efforts to increase the photovoltaic performance of GaAs single-junction solar cells using spectral conversion layers, respectively, composed of europium-doped (Eu-doped) phosphors, ytterbium/erbium-doped (Yb/Er-doped) phosphors, and a combination of Eu-doped and Yb/Er-doped phosphors. Spin-on film deposition was used to apply the conversion layers, all of which had a total phosphor concentration of 3 wt%. The chemical compositions of the phosphors were examined by energy-dispersive X-ray spectroscopy. The fluorescence emissions of the phosphors were confirmed by using photoluminescence measurements. Under laser diode excitation at 405 nm, we observed green luminescent downshift (LDS) emissions by Eu-doped phosphors at wavelengths of 479 nm to 557 nm, and under excitation at 980 nm, we observed red up-conversion (UC) emissions by Yb/Er-doped phosphors at wavelengths of 647 nm to 672 nm. The spectral conversion layers were characterized in terms of optical reflectance, external quantum efficiency, and photovoltaic current and voltage under AM 1.5 G simulations. The conversion efficiency of the cell combining Eu-doped and Yb/Er-doped phosphors (23.84%) exceeded that of the cell coated with Yb/Er-doped phosphors (23.72%), the cell coated with Eu-doped phosphors (23.19%), and the cell coated without phosphors (22.91%).

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“…These cap and passivation layers lead to absorb a wide range of photons from 500-850 nm by decreasing the optical reflection losses. Since EQE value changes with the wavelength, the average weighted EQE value can be calculated from the simulated results with the equation (5), as follows [29]:…”

Section: Effect Of Both Cap and Passivation Layersmentioning

confidence: 99%

Projected Performance of InGaAs/GaAs Quantum Dot Solar Cells: Effects of Cap and Passivation Layers

Ankhi

Islam

Hasan³

et al. 2020

IEEE Access

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In this work, the effects of AlxGa1-xAs cap and passivation (such as SiO2, Si3N4, and HfO2) layers on the performance of InGaAs/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been studied. The low surface recombination rate of ~10 3 per cm 3 s is achieved by optimizing the composition, x = 0.40, and thickness (200 nm) of the AlxGa1-xAs cap layer. The optical reflectance is also evaluated for devices with different passivation. The solar cell with Si3N4 shows the lowest reflectance of 10.53%. The photogeneration rate has been enhanced at the quantum dot region because of the improvement of the photocurrent provides by both cap and passivation layers. There is also an increment found in the average external quantum efficiency of 39.56% as compared to that of the bared conventional QDIBSC. As a result, the solar cell, with both Al0.40Ga0.60As cap and Si3N4 passivation layers, shows the conversion efficiency of 27.8%, which is higher than that of 21.6% for conventional In0.53Ga0.47AS/GaAs-based QDIBSC. These results indicate that GaAs-based QDIBSCs with both Al0.40Ga0.60As cap and Si3N4 passivation layers are promising for next-generation photovoltaic applications.

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Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Cited by 12 publications

References 28 publications

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors

Projected Performance of InGaAs/GaAs Quantum Dot Solar Cells: Effects of Cap and Passivation Layers

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