Electrical and optical characteristics of etch induced damage in InGaAs

Berg, Elliot J.

doi:10.1116/1.590459

Cited by 11 publications

(6 citation statements)

References 11 publications

(6 reference statements)

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“…For example, in the fabrication of multichip optoelectronic module ͑MOM͒ structures, the surface roughness plays a significant role since the level of scattering and microwave losses, which are related to the surface roughness, modify the optical and microwave properties of the structure. As reported by Berg and Pang, 10 the surface damage, reflectivity, sidewall damage, defect density, thermal load etc. that occur during the etching process can degrade device characteristics.…”

Section: B Surface Roughnessmentioning

confidence: 68%

Reactive ion etching of quartz and Pyrex for microelectronic applications

Zeze

Forrest

Carey

et al. 2002

Journal of Applied Physics

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(2002). Reactive ion etching of quartz and pyrex for micro electronic applications. Journal of applied physics 92(7): 3624-3629 and may be found at https://doi.org/10.1063/1.1503167Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. The reactive ion etching of quartz and Pyrex substrates was carried out using CF 4 /Ar and CF 4 /O 2 gas mixtures in a combined radio frequency ͑rf͒/microwave ͑w͒ plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture ͑CF 4 /Ar or CF 4 /O 2 ), the relative concentration of CF 4 in the gas mixture, the rf power ͑and the associated self-induced bias͒ and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80°and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

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Section: B Surface Roughnessmentioning

confidence: 68%

Reactive ion etching of quartz and Pyrex for microelectronic applications

Zeze

Forrest

Carey

et al. 2002

Journal of Applied Physics

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“…E.W Berg and S.W. Pang also used conductance measurements to evaluate lateral etch damage in the GaAs material system [3]. These studies showed AlInAs/InGaAs was more susceptible to sidewall damage than the AlGaAs/InGaAs with respective dead layers of 243 nm and 146 nm.…”

Section: Resultsmentioning

confidence: 97%

Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe

et al. 2000

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In this study, we use a quantum well (QW) probe structure to explore the size dependent effects of sidewall recombination in GaN. Mesas 0.8-7 µm in width with pitches of 4 µm, 8 µm, and 12 µm were etched into the QW probe structure, exposing the QW at the sidewalls. Several etch conditions were investigated. Room temperature photoluminescence (PL) measurements, using a He-Cd laser as an excitation source and laser spot size of approximately 230 µm, were taken before and after the mesas were etched. The effects of sidewall formation were quantified by comparing the maximum PL intensity of the QW before and after etch. Higher remaining PL intensity was observed for etch conditions which used both Ar ions and Cl 2 gas instead of only Ar ions. The fraction of remaining PL decreased with decreasing mesa width, however the remaining PL intensity was relatively large even for small features. The preliminary data suggested that GaN is relatively insensitive to sidewall damage.

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“…Therefore, an optimal rf power of 120 W was used to balance the undercut and etching selectivity. The anisotropy of dry etching greatly depended on ICP chamber pressure; 16,17 thus, 1.7 mTorr was used for chamber pressure to optimize etching anisotropy after calibration tests. The byproduct of chlorine-based InP ICP etching was InCl x , which was generally involatile below 150°C.…”

Section: Methodsmentioning

confidence: 99%

Sub-100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO[sub 2] Resist

Liu

2008

J. Electrochem. Soc.

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Typical methods for sub-100 nm compound semiconductor patterning are based on indirect pattern transfer using SiO 2 or SiN 4 as intermediate masks, which inevitably increase the complexity of pattern transfer and cause potential damage to samples. We present an approach of direct pattern transfer using Ti͑OBu n ͒ 4 sol-gel-derived TiO 2 resist as mask. The optimal dose of TiO 2 resist for E-beam lithography is ϳ220 mC/cm 2 . The sample InP compound semiconductor etching selectivity to TiO 2 resist is as high as 9:1 with aspect ratio of over 30:1. Various sub-100 nm scale inductively coupled plasma etching patterns are obtained with a high-quality etching profile. The smallest feature is as small as 20 nm wide with a depth of over 600 nm.Compound semiconductor-based devices have a variety of applications in communications, photonics, and optoelectronics, such as transistors, lasers, diodes, photodetectors, etc. Recently, semiconductor devices with a sub-100 nm scale have been drawing more and more attention due to their high integratability and various unique applications, such as very-large-scale integration, quantum disk confinement structure, and photonic bandgap. 1-4 For those purposes, various instruments and techniques have been developed to reduce the size of compound semiconductor devices to such a small scale.However, currently sub-100 nm patterning of a compound semiconductor is limited by the lithography resist. For example, for InP semiconductor compound etching, the etching selectivity of poly͑methyl methacrylate͒ ͑PMMA͒ is as low as 2-5. 5 In addition, PMMA could not resist high temperatures over 200°C, which is required by chlorine-based InP dry etching to remove the by-product during the etching process. Hence, SiO 2 or SiN 4 are typically used as intermediate masks for indirect pattern transfer. First, nanopatterns are formed on resist using nanolithography. Next, the patterns are transferred to SiO 2 or SiN 4 by dry etching. Finally, after removing the resist and subsequent pattern transfer to the compound semiconductor by etching using intermediate SiO 2 or SiN 4 mask, this intermediate mask has to be removed for the subsequent fabrication process. These additional mask transfer and etching away processes inevitably increase the complexity of InP submicrometer patterning, especially for sub-100 nm size patterns. Therefore, it is desirable to find an easier and effective method of compound semiconductor pattern transfer. One method is to use the recently reported metal oxide nanolithography resist, 6-8 which is expected to have harder structures and higher resistance to temperature and etching chemicals.In this paper, we present a method of sub-100 nm direct pattern transfer of compound semiconductor using sol-gel-derived spincoatable TiO 2 resist as mask. Here, we specifically demonstrate the technique on InP compound semiconductor using inductively coupled plasma reactive ion etching ͑ICP-RIE͒. This technique can be readily extended to GaAs, InGaAs, InGaP, InAlAs, AlGaAs, InGaAsP, and other com...

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Electrical and optical characteristics of etch induced damage in InGaAs

Cited by 11 publications

References 11 publications

Reactive ion etching of quartz and Pyrex for microelectronic applications

Reactive ion etching of quartz and Pyrex for microelectronic applications

Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe

Sub-100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO[sub 2] Resist

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