Electrical and optical characterisation of vanadium in 4H and 6H–SiC

Lauer, V.; Brémond, G.; Souifi, A.; Guillot, G.; Chourou, K; Anikin, M. M.; Madar, R.; Clerjaud, B.; Naud, C.

doi:10.1016/s0921-5107(98)00512-1

Cited by 37 publications

(26 citation statements)

References 10 publications

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“…Temperature-dependent Hall or resistivity measurements of both the vanadium-doped and HPSI samples often yield an activation energy ͑E a ͒ of 1.1 eV, although values up to 1.6 eV have also been measured in both types of material. [3][4][5] In unintentionally doped semi-insulating SiC, several different types of intrinsic point defects are observed, [6][7][8][9] but a defect level is reported for only one of them, the carbon vacancy, V C . 1 In neither type of material is the species responsible for the 1.1-eV level known.…”

Section: Introductionmentioning

confidence: 99%

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Zvanut

Konovalov

Wang

et al. 2004

Journal of Applied Physics

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Electron paramagnetic resonance (EPR) spectroscopy and photo-induced EPR are used to examine the point defects in vanadium-doped 4H-SiC and high-purity semi-insulating (HPSI) 4H-SiC grown by physical vapor transport. Both types of samples often exhibit a 1.1-eV activation energy, E a , as extracted from the temperature-dependent Hall/resistivity measurements; however, different defects are related to the same E a in each case. In the vanadium-doped wafers, the EPR data reveal both V 4+ and V 3+ in the same sample; thus, the 1.1-eV Hall activation energy is tentatively interpreted as the V 3+/4+ acceptor level. However, this conclusion cannot be confirmed because additional defects complicate the photoresponse of vanadium. The carbon vacancy, which is detected in all the HPSI wafers, exhibits a range of photothresholds similar to the various values measured for E a . The photo-EPR and temperature-dependent Hall/resistivity measurements made before and after a 1600°C anneal suggest that several different types of nonuniformly distributed defects participate in compensation of the HPSI material and that annealing selectively removes those with different defect levels.

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Section: Introductionmentioning

confidence: 99%

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Zvanut

Konovalov

Wang

et al. 2004

Journal of Applied Physics

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“…shows dominant chemical elements observed in used wafers using Glow Discharge Mass Spectroscopy (GDMS). the II-VI detectors are not able to detect alpha particles most probably due to vanadium doping because it is known that vanadium creates deep recombination centers for electrons in SiC and suppress charge collection efficiency [5][6]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical and Spectroscopic Properties of SiC Detectors

Brynza

Belas

Praus

et al. 2019

2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product µe τ e alpha = 3.5×10 -7 cm 2 /V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated µe τ e alpha = 5.4×10 -6 cm 2 /V using AuTi/SiC/TiAu contact structure.

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“…But the knowledge of their magnetooptical properties in SiC is still very incomplete or most often absent. Among the transition metals vanadium has been particularly well studied in 4H and 6H-SiC some decades ago for its use in microelectronic applications, e.g., vanadium doping in the 10 18 cm −3 concentration range, allowed to obtain highly resistive semi-insulating substrates by compensating residual donor and acceptor impurities [26][27][28][29][30][31][32]. As nowadays such substrates can be made with the use of intrinsic defects, generated under nonstoichiometric growth conditions, the research interest for this dopant has strongly diminished.…”

Section: Introductionmentioning

confidence: 99%

Transition metal qubits in 4H -silicon carbide: A correlated EPR and DFT study of the spin S=1 vanadium V
Bardeleben
¹
,
Zargaleh
²
,
Cantin
³

et al. 2019
Phys. Rev. Materials
14
0
11
0
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Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit applications, transition metals in this material have not yet been recognized as alternative systems. We have investigated the magneto-optical properties of the V 3+ center in 4H -SiC by electron paramagnetic resonance (EPR) and photo-EPR spectroscopy in view of their possible application in quantum technology. We show that they fulfill all the requirements for such applications: a high-spin S = 1 ground state, optically induced ground-state spin polarization of more than 70%, long spin-lattice relaxation times of the order of a second, as well as associated zero-phonon photoluminescence emission lines in the range of 1.8 μm. Further, the zero-field splitting parameter D is temperature dependent and increases between T = 4 K and T = 292 K linearly with a rate of 440 kHz/K, allowing potential nanoscale temperature sensing. These properties make the vanadium acceptor an extremely promising candidate for qubit applications with optical properties in the telecommunication optical range.

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Electrical and optical characterisation of vanadium in 4H and 6H–SiC

Cited by 37 publications

References 10 publications

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Electrical and Spectroscopic Properties of SiC Detectors

Transition metal qubits in 4H -silicon carbide: A correlated EPR and DFT study of the spin S=1 vanadium V
Bardeleben
¹
,
Zargaleh
²
,
Cantin
³

et al. 2019
Phys. Rev. Materials
14
0
11
0
View full text Add to dashboard Cite

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Electrical and optical characterisation of vanadium in 4H and 6H–SiC

Cited by 37 publications

References 10 publications

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

Electrical and Spectroscopic Properties of SiC Detectors

Transition metal qubits in 4H -silicon carbide: A correlated EPR and DFT study of the spin S=1 vanadium VBardeleben1, Zargaleh2, Cantin3 et al. 2019Phys. Rev. Materials140110View full textAdd to dashboardCite

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Transition metal qubits in 4H -silicon carbide: A correlated EPR and DFT study of the spin S=1 vanadium V
Bardeleben
¹
,
Zargaleh
²
,
Cantin
³

et al. 2019
Phys. Rev. Materials
14
0
11
0
View full text Add to dashboard Cite