Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Studenyak, I.P.; Kranjčec, M.; Kovács, Gy.; Desnica-Frankovic, I.D.; Molnar, A. A.; Paňko, Václav; Slivka, V. Yu.

doi:10.1016/s0022-3697(01)00139-1

Cited by 33 publications

(28 citation statements)

References 14 publications

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“…A combined analysis of joint probability density functions and one particle potentials results in a prediction of potential ionic conductors. Studenyak et al (2002) …”

Section: Resultsmentioning

confidence: 99%

A structural differentiation of quaternary copper argyrodites: Structure — property relations of high temperature ion conductors

Nilges¹,

Pfitzner²

2005

Zeitschrift Für Kristallographie - Crystalline Materials

113

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“…A combined analysis of joint probability density functions and one particle potentials results in a prediction of potential ionic conductors. Studenyak et al (2002) …”

Section: Resultsmentioning

confidence: 99%

A structural differentiation of quaternary copper argyrodites: Structure — property relations of high temperature ion conductors

Nilges¹,

Pfitzner²

2005

Zeitschrift Für Kristallographie - Crystalline Materials

113

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“…[2]. They are characterized by high electrical conductivity and low activation energy [3]. Optical studies have shown that the absorption edge of Cu 7 GeS 5 I crystals exhibits Urbach behaviour in a wide temperature range [3].…”

Section: Introductionmentioning

confidence: 99%

Optical studies of as-deposited and annealed Cu7GeS5I thin films

Studenyak¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Cu 7 GeS 5 I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu 7 GeS 5 I thin films were measured in the temperature interval 77-300 K. The temperature behaviour of Urbach absorption edge and dispersion of refractive index for as-deposited and annealed Cu 7 GeS 5 I thin films was analyzed. Influence of annealing on the optical parameters and disordering processes in Cu 7 GeS 5 I thin films was studied.

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“…Structural, electrical and optical properties of Cu 7 GeS(Se) 5 I and mixed crystals based on them were studied in papers [3][4][5][6][7]. It is shown that the electrical conductivity of Cu 7 GeSe 5 I crystal at room temperature was found to be rather high (64 S/m at 295 K and 10 6 Hz) and typical for advanced superionic conductors [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…At SSe anionic substitution, the nonlinear increase of the electric conductivity by more than an order of magnitude was observed in   I Se S Ge Cu 5 x x 1 7  mixed crystals [7]. Optical studies have shown that the absorption edge of Cu 7 GeS(Se)S 5 I crystals and mixed crystals based on them exhibits Urbach behaviour in a wide temperature range [3,[5][6][7]. A nonlinear decrease of the optical pseudogap in the   I Se S Ge Cu 5 x x 1 7  mixed crystals at SSe anionic substitution is observed [7].…”

Section: Introductionmentioning

confidence: 99%