2022
DOI: 10.1039/d2tc01279k
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Electrical and magneto-transport in the 2D semiconducting MXene Ti2CO2

Abstract: The Hall scattering factor is formulated using Rode’s iterative approach to solv- ing the Boltzmann transport equation in such a way that it may be easily computed within the scope...

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Cited by 9 publications
(20 citation statements)
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“…5, we show the calculated Hall factor for all the three compounds, Sc 2 CF 2 , Sc 2 CO 2 and Sc 2 C(OH) 2 both as a function of temperature and electron concentration. It is important to note here that Hall factor formulated by us 35 as shown in eqn (17) depends on both the perturbations g(ε) as well as h(ε). Such a method is quite distinct in comparison to the similar currently proposed method, for example, the one adopted by Macheda et al, 33 where the authors have calculated the Hall scattering factor in graphene in terms of the solution of the Boltzmann transport equation.…”
Section: Resultsmentioning
confidence: 97%
See 2 more Smart Citations
“…5, we show the calculated Hall factor for all the three compounds, Sc 2 CF 2 , Sc 2 CO 2 and Sc 2 C(OH) 2 both as a function of temperature and electron concentration. It is important to note here that Hall factor formulated by us 35 as shown in eqn (17) depends on both the perturbations g(ε) as well as h(ε). Such a method is quite distinct in comparison to the similar currently proposed method, for example, the one adopted by Macheda et al, 33 where the authors have calculated the Hall scattering factor in graphene in terms of the solution of the Boltzmann transport equation.…”
Section: Resultsmentioning
confidence: 97%
“…Studies on magnetotransport of materials using first principles are very scarce. Macheda et al investigated magnetotransport in diamond, 33 and graphene, 34 and our recent work on Ti 2 CO 2 35 are the few existing reports. Also, the transverse magnetoresistance of copper, bismuth and WP 2 are determined by combining ab initio Fermi surfaces with Boltzmann transport theory by Zhang et al 36 Magnetotransport in semiconductors was used primarily to quantify carrier concentration, which facilitates the design and production of efficient electronic devices.…”
Section: Introductionmentioning
confidence: 94%
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“…where, µ H and µ are the Hall and the drift mobility, respectively, and r H is the Hall scattering factor. This solution gives a more accurate result for the Hall scattering factor compared with the other expressions based on the RTA [71].…”
Section: Mobility and Conductivitymentioning
confidence: 83%
“…Similarly, in the presence of an arbitrary magnetic field, the BTE can be solved. The distribution function in such cases can be written as [33,71]…”
Section: Mobility and Conductivitymentioning
confidence: 99%